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Pseudopotential-Based Full Zone K . P Technique For Indirect Bandgap Semiconductors: Si, Ge, Diamond And Sic, Ceyhun Bulutay
Pseudopotential-Based Full Zone K . P Technique For Indirect Bandgap Semiconductors: Si, Ge, Diamond And Sic, Ceyhun Bulutay
Turkish Journal of Physics
The k . p is a versatile technique that describes the semiconductor band structure in the vicinity of the bandgap. The technique can be extended to full Brillouin zone by including more coupled bands into consideration. For completeness, a detailed formulation is provided where the associated k . p parameters are extracted from the local empirical pseudopotential method in the form of band edge energies and generalized momentum matrix elements. We demonstrate the systematic improvement of the technique with the proper choice of the band edge states for the group-IV indirect bandgap semiconductors: Si, Ge, diamond and SiC of the …