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Imaging Complex Structure In Shallow Seismic-Reflection Data Using Prestack Depth Migration, John H. Bradford, Lee M. Liberty, Mitchell W. Lyle, William P. Clement, Scott Hess
Imaging Complex Structure In Shallow Seismic-Reflection Data Using Prestack Depth Migration, John H. Bradford, Lee M. Liberty, Mitchell W. Lyle, William P. Clement, Scott Hess
CGISS Publications and Presentations
Prestack depth migration (PSDM) analysis has the potential to significantly improve the accuracy of both shallow seismic reflection images and the measured velocity distributions. In a study designed to image faults in the Alvord Basin, Oregon, at depths from 25–1000 m, PSDM produced a detailed reflection image over the full target depth range. In contrast, poststack time migration produced significant migration artifacts in the upper 100 m that obscured reflection events and limited the structural interpretation in the shallow section. Additionally, an abrupt increase from ~2500 to >3000 m/s in the PSDM velocity model constrained the interpretation of the transition …
Reflectivity Modeling Of A Ground-Penetrating-Radar Profile Of A Saturated Fluvial Formation, William P. Clement, Warren Barrash, Michael D. Knoll
Reflectivity Modeling Of A Ground-Penetrating-Radar Profile Of A Saturated Fluvial Formation, William P. Clement, Warren Barrash, Michael D. Knoll
Geosciences Faculty Publications and Presentations
Major horizons in radar reflection profiles may correlate with contacts between stratigraphic units or with structural breaks such as fault surfaces. Minor reflections may be caused by clutter or, in some cases, may indicate material properties or structure within stratigraphic units. In this study, we examine the physical basis for major and minor reflections observed in a shallow, unconfined, fluvial aquifer near Boise, Idaho, U. S. A. We compare a 2D profile from a surface ground-penetrating-radar reflection transect with the 1D modeled reflection profiles at three wells adjacent to the surface-reflection profile. The 1D models are based on dielectric constant …