Open Access. Powered by Scholars. Published by Universities.®
- Publication
- Publication Type
Articles 1 - 2 of 2
Full-Text Articles in Entire DC Network
Hybrid Ultra-Compact 4th Order Band-Pass Filters Based On Piezoelectric Aln Contour-Mode Mems Resonators, Chengjie Zuo, Nipun Sinha, Carlos R. Perez, Rashed Mahameed, Marcelo B. Pisani, Gianluca Piazza
Hybrid Ultra-Compact 4th Order Band-Pass Filters Based On Piezoelectric Aln Contour-Mode Mems Resonators, Chengjie Zuo, Nipun Sinha, Carlos R. Perez, Rashed Mahameed, Marcelo B. Pisani, Gianluca Piazza
Chengjie Zuo
This work reports on the design, fabrication and testing of a new class of hybrid (filter design using combined electrical and mechanical coupling techniques) ultra-compact (800×120 μm) 4th order band-pass filters based on piezoelectric Aluminum Nitride (AlN) contour-mode microelectromechanical (MEM) resonators. The demonstrated 110 MHz filter shows a low insertion loss of 5.2 dB in air, a high out-of-band rejection of 65 dB, a fractional bandwidth as high as 1.14% (hard to obtain when only conventional electrical coupling is used in the AlN contour-mode technology), and unprecedented 30 dB and 50 dB shape factors of 1.93 and 2.36, respectively. All …
Performance Comparison Of Pb(Zr0.52Ti0.48)O3-Only And Pb(Zr0.52Ti0.48)O3-On-Silicon Resonators, Hengky Chandrahalim, Sunil A. Bhave, Ronald G. Polcawich, Jeff Pulskamp, Dan Judy, Roger Kaul, Madan Dubey
Performance Comparison Of Pb(Zr0.52Ti0.48)O3-Only And Pb(Zr0.52Ti0.48)O3-On-Silicon Resonators, Hengky Chandrahalim, Sunil A. Bhave, Ronald G. Polcawich, Jeff Pulskamp, Dan Judy, Roger Kaul, Madan Dubey
Faculty Publications
This paper provides a quantitative comparison and explores the design space of lead zirconium titanate (PZT)–only and PZT-on-silicon length-extensional mode resonators for incorporation into radio frequency microelectromechanical system filters and oscillators. We experimentally measured the correlation of motional impedance (RX) and quality factor (Q) with the resonators’ silicon layer thickness (tSi). For identical lateral dimensions and PZT-layer thicknesses (tPZT), the PZT-on-silicon resonator has higher resonant frequency (fC), higher Q (5100 versus 140), lower RX (51 Ω versus 205 Ω), and better linearity [third-order input intercept …