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Study Of The Role Of The Technological Impurities States In The Formation Of A Defective Structure Of Si Doped With Transition Elements, Sharifa Bekmuradovna Utamuradova, Elmira Maxambetyarovna Naurzalieva

Euroasian Journal of Semiconductors Science and Engineering

In this paper, the effect of high-temperature treatments on the development of a defect structure of silicon with transition elements is studied by using capacitive and infrared spectroscopy. It was found that the presence of bound states of technological impurities - particles of SiO2 and SiO4, in Si doped with transition elements leads to a change in the efficiency of the formation of deep levels associated with the atoms of manganese, cobalt and chromium. It was found that the presence of bound states of technological impurities in silicon, for example, SiO2 particles in the Si lattice, increases the efficiency of …

Features Of Magnetic Properties Of Silicon With Magnetic Nanoclusters, Giyos Haydarovich Movlonov, Sobirjon Boltayevich Isomov, Shakhboz Nizom Ugli Ibodullayev, Shahobiddin Boytemir Ugli Shergoziyev

Euroasian Journal of Semiconductors Science and Engineering

The unique magnetic properties of silicon containing nanoclusters formed by impurity manganese atoms and anomalously high negative magnetoresistance at room temperature, which are absent in conventional doped semiconductor materials, have been established

Creation Of New Materials Based On Dielectric Films Using Low-Energy Ion Implantation, Muradulla Tagaevich Normuradov, Dilshod Abdurazakovich Normurodov, Kuvondik Turakulovich Davronov, Nilufar Moyli Kizi Mustafayeva

Euroasian Journal of Semiconductors Science and Engineering

In the article, by the methods of spectroscopy of elastically scattered electrons, Oje electron spectroscopy and measurement of secondary emission characteristics of pure and ion-implanted Si samples. As well as dielectric 〖SiO〗_2 films obtained using thermal oxidation in an atmosphere of dry oxygen and implantation of low-energy O_2 ions into single crystals silicon (III) investigated changes in the conditions of generation and exit of secondary electrons from the samples. It is shown that the fine structure of the energy dependences of the secondary electron emission coefficients and their values for dielectric 〖SiO〗_2, films is determined by the history of the …

Effect Of Temperature Annealing On The Efficiency Of Nickel-Doped Silicon Solar Cells, Halmurat Mijitovich Iliev, Zoir Tohir Ugli Kenjaev, Babir Alimdjanovich Isakov, Nigmat Narkulov

Euroasian Journal of Semiconductors Science and Engineering

Si and Si structures with a deep p–n-junctions (30 microns) were obtained by diffusion doping. It is shown that the parameters of silicon solar cells with a deep-lying p-n junction are improved by Nickel doping. Influence of additional temperature annealing at different temperatures of samples with clusters of Nickel atoms in the silicon lattice was investigated and optimal conditions for cluster formation were determined

State Of Research And Prospects Of Development Of Semiconductor Multilayer Heterostructures Based On Si (Review), Khojakbar Sultanovich Daliev, Shakhriyor Khusanovich Yulchiev

Euroasian Journal of Semiconductors Science and Engineering

The analysis of the study’s results of the physical properties of metal-insulator-semiconductor (MIS) structures of the Al-SiO2-Si type is presented. It is noted in such structures obtained by the method of thermal oxidation, the main determining parameters of MIS structures are surface states (SS) at the Si-SiO2 interface. The irradiation with γ-quanta of MIS structures leads to an increase in Nss and Dss and, also to a change in their energy distribution in the Si band gap. Studies of the structure of silicon-based solid solutions and heterostructures by electro-physical, photoelectric, X-ray structural and scanning probe microscopic methods have established structural …

Influence Of Low-Temperature Treatments On The Behavior Of Deep Levels In Silicon Doped With Platinum, Sharifa Bekmuradovna Utamuradova, Zafarbek Olimbek Ugli Olimbekov, Jonibek Jumayevich Khamdamov, Kakhramon Makhmudjanovich Fayzullaev

Euroasian Journal of Semiconductors Science and Engineering

The kinetics of deep-level annealing in silicon with an admixture of platinum at low temperatures was studied using capacitive spectroscopy. It is shown that isothermal annealing of deep levels in Si begins at 350oC and leads to a sharp decrease in the concentration of Pt levels, while as annealing progresses, the concentration of the EC-0.21 eV level due to heat treatment defects increases. It was found that the kinetics of annealing levels also depends on the oxygen content in silicon.

The Flow Sensors Of A Continuous Medium, Sayfillo Saidovich Nasriddinov, Daryabay Muratbaevich Esbergenov

Euroasian Journal of Semiconductors Science and Engineering

The design features of a thermoanemometric sensor based on silicon with nanoclusters of Nickel atoms, which has high sensitivity and stability of output parameters, are considered. Their electrophysical parameters are studied depending on the type of continuous media.

Radiation And Thermal Defect Formation In Silicon Mis - Structures With Impurities Of Refractory Elements, Khojakbar Sultanovich Daliev, Shahrukh Khozhakbarovich Daliev, Anifa Daryabayevna Paluanova, Zafarjon Murodovich Husanov

Euroasian Journal of Semiconductors Science and Engineering

. The effect of isochronous annealing on the parameters of MIS- structures with impurities of tungsten and molybdenum irradiated with 60Co -quanta was studied. It is shown that the presence of impurities of refractory elements - tungsten or molybdenum - in the silicon substrate of MIS - structures leads to stabilization of all parameters of the studied structures Al-SiO2-Si and Al-SiO2-Si under various heat treatments at temperatures Totj = 70÷400oC and irradiation. It was found that pre-annealing of MIS - structures with W and Mo impurities at 350oC for 30 minutes in a nitrogen atmosphere, carried out in order to …

Semiconductor Nanofabrication Via Metal-Assisted Chemical Etching: Ternary Iii-V Alloys And Alternative Catalysts, Thomas S. Wilhelm

Theses

The increasing demand for complex devices that utilize three-dimensional nanostructures has incentivized the development of adaptable and versatile semiconductor nanofabrication strategies. Without the introduction and refinement of methodologies to overcome traditional processing constraints, nanofabrication sequences risk becoming obstacles that impede device evolution. Crystallographic wet-chemical etching (e.g., Si in KOH) has historically been sufficient to produce textured Si surfaces with smooth sidewalls, though it lacks the ability to yield high aspect-ratio features. Physical and chemical plasma etching (e.g., reactive-ion etching) evolved to allow for the creation of vertical structures within integrated circuits; however, the high energy ion bombardment associated with dry …

Change Of Electrophysical Properties Of The Si(111) And Si(100) Surface In The Process Of Ion Implantation And Next Annealing, A. S. Rysbaev, I. R. Bekpulatov, B. D. Igamov, Sh. X. Juraev

Eurasian Journal of Physics and Functional Materials

The change in the electrical properties of the Si(111) and Si(100) surfaces during ion implantation and subsequent annealing was studied. The possibilities of controlling of the electrophysical properties of the Si(111) and Si(100) surface layers by the implantation of ions of alkaline and alkaline-earth elements are analyzed. Some electrophysical properties of semiconductors containing p- and n-structures and the possibilities of their application in electronics are discussed.

Results Of Experimental Study Silicon Influence On Morphofunctional Structure Of Liver, Sh.R. Abzalova

Central Asian Journal of Pediatrics

The aim of study was to research long-term hepatic morphofunctional adaptations of rats being undegone to various doses of silicon in experimental conditions. The materials were 22 male Wistar rats weighing 250-280 grams (256.8 ± 3.44 g) at the age from 4 to 7 months. All experimental proce-dures were carried out according to the requirements of International Rules for Treatment Animals. The research protocol was approved by the Ethics Committee of the Ministry of Health in the Republic of Uzbekistan. Silicon chloride (SiCl4) being used forexperiment was dissolved in distilled water and administered intraperitoneally (IP) in a single dose depending …

Silicon Fertilization In Rice And Wheat: Dynamics With Trace Elements And Effect Of Silicate Slag Granular Size On The Release Pattern Of Monosilicic Acid In Soil, Wooiklee S. Paye

LSU Doctoral Dissertations

Studies were conducted to evaluate the impact of silicon (Si) fertilization on the uptake of harmful trace elements in Louisiana rice production system, and document the effect of silicate slag granular size on its ability to supply Si in wheat. The influence of silicate slag and lime on the uptake and translocation of harmful trace elements in rice grain was determined. Results showed that both slag and lime had similar effects on pH at five of the nine sites investigated. Soil Si was significantly (P <0.001) increased with application of silicate slag at all sites. Lime and silicate slag had no effect on the concentration of trace elements in soil. However, increasing Si rates were negatively correlated with arsenic (As) and cadmium (Cd) concentration in rice grain. The release pattern of monosilicic acid (H₄SiO₄) from wollastonite and silicate slag was compared in a wheat greenhouse …

Study Of Photoconductivity Spectrum Of Sulfur-Doped Silicon In Forward And Backward Connection Modes., Abdulaziz Shavkatovich Mavlyanov, Erkin Berkinbayevich Khaltursunov, Muzaffar Komilovich Azizov, Khurzoda Kozimjon Qizi Mavlonova

Euroasian Journal of Semiconductors Science and Engineering

The paper reports results of study of photoconductivity spectrum of sulfur- doped samples of silicon (initial p-type silicon with r = 1 Ohm×cm) under dark conditions and while samples were subjected to constant light in forward and reverse switching modes. The authors report negative photoconductivity of the diode structure in forward mode, which is most likely associated with the injection of current carriers, associated with the level E = 0,4 eV. A sharp decrease in photoconductivity was detected at E »0,52 eV, where one can witness infrared quenching of photoconductivity (IRQ) in samples in forward and reverse modes in light.

The Reactivity Of Ditetrelenes Towards Organophosphorus Oxides, Maissa Belcina

Electronic Thesis and Dissertation Repository

The reactivity of tetramesityldisilene 4 and tetramesityldigermene 5 towards organophosphorus oxides was explored in this thesis. The reaction of dialkyl and diarylphosphine oxides and phosphites with ditetrelenes 4 and 5 resulted in a 1,3-addition to form diorganodisilyl and digermyl phosphinites 27, 28, 31, 32 and disilyl phosphites 35 and 36. The 1,3-addition resulted in a mild two electron reduction of the P(V) centre of the phosphine oxide and phosphite to a P(III) centre in the products, without the use of heat or a catalyst. The reaction of organophosphorus oxides provides another example of a main group …

Study Of The Schottky Power Diodes Degradation Under 60co -Irradiaion, Marat Tagaev, Bakhtiyar Abdikamalov, Viktor Statov, Saparbay Bekbergenov

Euroasian Journal of Semiconductors Science and Engineering

The study concerns resistance to gamma-radiation damage of the power Schottky diodes Cr-Si. These diodes demonstrate parameters stability in the wide range of irradiation doses. Also radiation-induced shift of the non-ideality factor n had been revealed

Features Of Temperature Sensitivity Of Silicon Structure With Depleted Base Region, Oybek Abdulkhaev, Rahimjon Bebitov, Alim Khakimov, Axmad Rakhmatov

Euroasian Journal of Semiconductors Science and Engineering

The results of a study of the temperature sensitivity of silicon structures with a depleted base region, in which the voltage of full depletion of the base region is used as a measurement parameter, are presented. It is shown that at a certain reverse operating voltage (Uo), the base region of the silicon structure under study is fully depleted, and the measuring potential by the growing operating voltage acquires a constant value, which changes only by changing of the temperature and proportionally to it. The temperature sensitivity of the structure was determined over a wide temperature range from -180°C to …

Energy Spectrum Of Defects In Silicon With Molybdenum Admixture, Shakhrukh Daliev, Anifa Paluanova, Kakhramon Fayzullaev, Srajatdin Kaypnazarov

Euroasian Journal of Semiconductors Science and Engineering

The DLTS and PC methods were used to study the energy spectrum of defects in silicon doped with molybdenum atoms. It was found that the diffusion introduction of Mo into Si leads to the formation of three deep levels with ionization energies Ec-0,20 eV and Ec – 0,29 eV and Ev + 0,36 eV. It is shown that the thermal and optical activation energies of the levels in n-Si practically coincide

Obtaining Homogeneous Silicon In The Process Of Alumothermic Reduction Of Silicon Dioxide, G. N. Chumikov, V. V. Klimenov, N. S. Tokmoldin, S. Zh. Tokmoldin

Eurasian Journal of Physics and Functional Materials

The influence of charge components on emergence of a homogeneous phase of silicon in the process of silicon dioxide reduction by aluminium has been studied. Optimal process parameters affecting the quality of the end product have been identified. These include the ratio of components of the synthetic charge (CaO, SiO₂ , CaF₂ ), the optimal amount of SiO₂ , the optimal amount of a reducing agent (Al) and the optimal Si/slag ratio. The homogeneous phase of silicon is easily separated from the slag, which contributes to the reduction of waste silicon during further technological operations.

Diffusion Parameters Of Atoms 3d Transitive Elements In Silicon, Zh. R. Alieva

Scientific Bulletin. Physical and Mathematical Research

Differential analysis of known experimental dependences of diffusion parameters from physical parameters of impurity atoms in silicon is made in this work and the semi empirical equations are developed for variety 3d transitive elements. It was supposed that such approach will provide revealing of the physical nature of process of diffusion of atoms. It was necessary to learn a dominating role of known physical parameters of impurity atoms such, as weight, serial number in the table of chemical elements, orbital radius, valence and an electronic configuration of external covers in their definition of the basic diffusion parameters in silicon. 4 …

The Range Of Effective Light Absorption And Electrophysic Properties Of A Solar Element "Nanoscale P-N Junctions», T. A. Jalalov, E. Z. Imamov, R. A. Muminov, Kh. N. Karimov

Scientific Bulletin. Physical and Mathematical Research

The creation of effective solar cells for long-term operation in open area with continuously changing thermal regime is an urgent scientific and technological task of our time. This task is considered in this paper. - the factors affecting the current-voltage characteristic of the "nanoscale p-n junction" are determined»; - calculated value of the photocurrent depending on the number of quanta in the light absorption spectrum (photocurrent in one "nanoscale p-p junction" is determined by the absorption of 41.81% of the incident solar radiation, that is, the absorption of almost half of the incident light intensity in the number of quanta), …

Removal Versus Ablation In Krf Dry Laser Cleaning Of Polystyrene Particles From Silicon, Sergey I. Kudryashov, Susan D. Allen

Susan D. Allen

Direct absorption and melting of 0.2, 0.5 and 1.1 μm polystyrene particles on a Si substrate irradiated by 248 nm excimer laser radiation was found to contribute to their dry laser removal via a "hopping" mechanism at cleaning thresholds of 0.05, 0.1, and 0.16 J/cm ², respectively. Ablation of these particles, which starts near the beginning of substrate deceleration at fluences above 0.4-0.5 J/cm ², suppresses particle removal due to ablative recoil momentum. At fluences above a second cleaning threshold of 0.7 J/cm ² particles are completely evaporated without any visible surface damage of the Si substrate.

© …

Electric Properties Of P-Cu2znsn(S_(1-X)Se_X)_4/N-Si Heterojunctions For The Creation New Of Solar Cells, А. Yusupov, S. Aliev, A. Rustamov

Acta of Turin Polytechnic University in Tashkent

For the first time was obtained the anisotype heterojunctions p-Cu₂ZnSn(Se_1-xS_x)₄/n-Si by sulfurization of precursors previously deposited on a substrate of polycrystalline silicon. We analyze the current-voltage characteristics and discuss the current transfer in created structures. It is shown that tunnel-recombination processes, the tunnel mechanism and currents limited by space charge are typical for direct bias. Under reverse bias the transfer of currents carried by the tunnel and the tunnel-recombination mechanisms.

Influence Of Heat Treatment On The Behaviorof Deep Levels In Silicon Doped By Tungsten, Shokhrukh Kh. Daliev, Abdugofur T. Mamadalimov, Sayfullo S. Nasriddinov, Anifa D. Paluanova

Euroasian Journal of Semiconductors Science and Engineering

By means of Deep Level Transient Spectroscopy the kinetics of the annealing of the levels of tungsten in silicon during heat treatment in the temperature range 150÷4000С was studied. It was found a non-monotonic change in the concentration of deep levels Ec-0.30 eV and Ec-0.39 eV under isothermal annealing: the concentrations of both levels at short times increase, then the concentration level of Ec-0.30 eV sharply decreases, and the reduction of the concentration of deep level Ec-0.39 eV is much slower.

Infrared Spectroscopy Of Silicon Doped By Stannum And Manganese, Sharifa B. Utamuradova, Ravshanbek M. Ergashev, Khusniddin J. Matchanov

Euroasian Journal of Semiconductors Science and Engineering

The processes of defect formation in silicon doped by tin and manganese and their interaction with uncontrolled impurities were studied by infrared spectroscopy.It was found that the presence of impurities of transition and isovalent elements leads to a technological decrease in the concentration of process impurities – oxygen and carbon. It was found that the introduction of manganese in Si leads to a strong decrease in the concentration of interstitial optically active oxygen Noopt: in rapidly cooled samples Si there is a decrease of Noopt by 50% compared to the original Si.

Influence Of Impurities Of Refractory Elements On The Inefficiency Of Charge Transfer In Charged Communication Devices, Abdugafur T. Mamadalimov, Shakhrukh Kh. Daliev

Euroasian Journal of Semiconductors Science and Engineering

The influence of impurities of refractory elements on the inefficiency of charge transfer in charge-coupled devices is investigated. Found that the magnitude of the inefficiency of transfer  directly proportional to the density of surface States and the density of surface States in the CCD registers, with the resulting n losses n ≤ 0.1 depends on the type specially introduced impurities. It is shown that in CCD structures doped with impurities Ti, Zr and Hf relative to the control structures, the charge loss is greater, and in doped with impurities W and Mo, the charge loss is less.

Influence Of Rhodium And Iridium Impurity Atoms On The Capacitive Characteristics Of Si-Siо2 Structures, Khojakbar S. Daliev, Shakhriyor Kh. Yulchiev, Xotamjon J. Mansurov

Euroasian Journal of Semiconductors Science and Engineering

It was found that the doping of the semiconductor substrate with Rh and Ir atoms leads to the increase in the density of surface states at the Si – SiO2 interface. It is determined that the surface states, due to the presence of an impurity Rh and Ir are effective generation centers.

Influence Of Heat Treatment On The Behavior Of Deep Levels In Silicon Doped By Tungsten, Shokhrukh Kh. Daliev, Abdugofur T. Mamadalimov, Sayfullo S. Nasriddinov, Anifa D. Paluanova

Euroasian Journal of Semiconductors Science and Engineering

By means of Deep Level Transient Spectroscopy the kinetics of the annealing of the levels of tungsten in silicon during heat treatment in the temperature range 150÷4000С was studied. It was found a non-monotonic change in the concentration of deep levels Ec-0.30 eV and Ec-0.39 eV under isothermal annealing: the concentrations of both levels at short times increase, then the concentration level of Ec-0.30 eV sharply decreases, and the reduction of the concentration of deep level Ec-0.39 eV is much slower.

Infrared Spectroscopy Of Silicon Doped By Stannum And Manganese, Sharifa B. Utamuradova, Ravshanbek M. Ergashev, Khusniddin J. Matchanov

Euroasian Journal of Semiconductors Science and Engineering

The processes of defect formation in silicon doped by tin and manganese and their interaction with uncontrolled impurities were studied by infrared spectroscopy.It was found that the presence of impurities of transition and isovalent elements leads to a technological decrease in the concentration of process impurities – oxygen and carbon. It was found that the introduction of manganese in Si leads to a strong decrease in the concentration of interstitial optically active oxygen Noopt: in rapidly cooled samples Si there is a decrease of Noopt by 50% compared to the original Si.

Capacitive Spectroscopy Of Defects In Semiconductors, Doped By Atoms Of Gadolinium, Shoakhriyor B. Norkulov, Khodjakbar S. Daliev, Makhmud Sh. Dehkanov, Uktam K. Erugliev

Euroasian Journal of Semiconductors Science and Engineering

The processes of formation of defects in silicon, doped by gadolinium are investigated by the method of DLTS. It is shown that in diffusion the introduction of Gd in the Si leads to the formation of deep levels with ionization energies Ec–0.23 eV, Ec–0.35 eV, Ec–0.41 eV and Ec–0.54 eV and a capture cross section of electrons n: 410-17cm-2, 210-15 cm2, 1.110-16 cm2 and 1.510-15 cm2, respectively, and in samples p-Si found only one level with Ev+0.32 eV.

Thermal Oxidation Of Silicon In A Home-Made Furnace System, Joshua Koskan

Physics Capstone Projects

I approached Dr. Shen with a desire for a project in understanding how to manage and expand the capabilities of a laboratory. After some discussion, my senior project was to complete a gas and water chiller system to an existing furnace for chemical vapor deposition. It should be able to handle temperatures up to 1100 ºC, hold a vacuum to mTorr, be easy to move samples in and out of the furnace, and cost effective.