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Design And Characterization Of Noveldevices For New Generation Of Electrostaticdischarge (Esd) Protection Structures, Javier Salcedo
Design And Characterization Of Noveldevices For New Generation Of Electrostaticdischarge (Esd) Protection Structures, Javier Salcedo
Electronic Theses and Dissertations
The technology evolution and complexity of new circuit applications involve emerging reliability problems and even more sensitivity of integrated circuits (ICs) to electrostatic discharge (ESD)-induced damage. Regardless of the aggressive evolution in downscaling and subsequent improvement in applications' performance, ICs still should comply with minimum standards of ESD robustness in order to be commercially viable. Although the topic of ESD has received attention industry-wide, the design of robust protection structures and circuits remains challenging because ESD failure mechanisms continue to become more acute and design windows less flexible. The sensitivity of smaller devices, along with a limited understanding of the …
Study Of Nanoscale Cmos Device And Circuit Reliability, Chuanzhao Yu
Study Of Nanoscale Cmos Device And Circuit Reliability, Chuanzhao Yu
Electronic Theses and Dissertations
The development of semiconductor technology has led to the significant scaling of the transistor dimensions -The transistor gate length drops down to tens of nanometers and the gate oxide thickness to 1 nm. In the future several years, the deep submicron devices will dominate the semiconductor industry for the high transistor density and the corresponding performance enhancement. For these devices, the reliability issues are the first concern for the commercialization. The major reliability issues caused by voltage and/or temperature stress are gate oxide breakdown (BD), hot carrier effects (HCs), and negative bias temperature instability (NBTI). They become even more important …
Design Of Cmos Lc Voltage Controlled Oscillators, Chetan Shambhulinga Salimath
Design Of Cmos Lc Voltage Controlled Oscillators, Chetan Shambhulinga Salimath
LSU Master's Theses
This work presents the design and implementation of CMOS LC voltage controlled oscillators. On-chip planar spiral inductors and PMOS inversion mode varactors were utilized to implement the resonator. Two voltage controlled oscillators (VCOs) were realized as a part of this work, one designed to operate at 1.1 GHz while the second at 1.8 GHz. Both VCOs were implemented in a scalable digital CMOS process, with the former in a 1.5 micron CMOS process and the latter in a 0.5 micron technology. A simulation based methodology was adopted to arrive at a simple pi model used to model the metal and …