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Determination Of The Band Gap Bowing Parameter Of A1xga1-Xn With Contactless Electroreflectance, Laura C. Mcglinchey
Determination Of The Band Gap Bowing Parameter Of A1xga1-Xn With Contactless Electroreflectance, Laura C. Mcglinchey
Theses and Dissertations
Contactless electroreflectance (CER), a modulation spectroscopy (MS) technique, has been used to study the A and C exciton transitions in A1xGa1-xN layers for a composition range of 0 ≤ x ≤ 0.48 at room temperature. Taking the entire composition range (0 ≤ x ≤ 1) into account by incorporating a previously reported band gap energy for AlN, the dependence of the A-exciton transition on composition showed a downward bowing from linearity. A bowing parameter of b = 1.7 eV was found. Analysis of the lower composition range 0 ≤ x ≤ 0.48 resulted in a linear fit, as did the …