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Dislocation Reduction In Gan Grown On Porous Tin Networks By Metal-Organic Vapor-Phase Epitaxy, Y. Fu, F. Yun, Y. T. Moon, Ü. Özgür, J. Q. Xie, X. F. Ni, N. Biyikli, H. Morkoç, Lin Zhou, David J. Smith, C. K. Inoki, T. S. Kuan
Dislocation Reduction In Gan Grown On Porous Tin Networks By Metal-Organic Vapor-Phase Epitaxy, Y. Fu, F. Yun, Y. T. Moon, Ü. Özgür, J. Q. Xie, X. F. Ni, N. Biyikli, H. Morkoç, Lin Zhou, David J. Smith, C. K. Inoki, T. S. Kuan
Electrical and Computer Engineering Publications
We report on the effectiveness of porous TiN nanonetworks on the reduction of threading dislocations (TDs) in GaN grown by metal-organic vapor-phase epitaxy (MOVPE). The porous TiN networks were formed by in situ annealing of thin-deposited Ti films deposited ex situ on GaN templates within the MOVPE growth chamber. Different annealing parameters in relation to surface porosity of TiN networks were investigated. Transmission electron micrographs indicated dislocation reduction by factors of up to 10 in GaN layers grown on the TiN nanonetwork, compared with a control sample. TiN prevented many dislocations present in the GaN templates from penetrating into the …
Effect Of Hydrostatic Pressure On The Current-Voltage Characteristics Of Gan∕Algan∕Gan Heterostructure Devices, Y. Liu, M. Z. Kauser, D. D. Schroepfer, P. P. Ruden, J. Xie, Y. T. Moon, N. Onojima, H. Morkoç, K.-A. Son, M. I. Nathan
Effect Of Hydrostatic Pressure On The Current-Voltage Characteristics Of Gan∕Algan∕Gan Heterostructure Devices, Y. Liu, M. Z. Kauser, D. D. Schroepfer, P. P. Ruden, J. Xie, Y. T. Moon, N. Onojima, H. Morkoç, K.-A. Son, M. I. Nathan
Electrical and Computer Engineering Publications
The current-voltage characteristics of n-GaN∕u-AlGaN∕n-GaN heterostructure devices are investigated for potential pressure sensor applications. Model calculations suggest that the current decreases with pressure as a result of the piezoelectric effect, and this effect becomes more significant with thicker AlGaN layers and increasing AlN composition. The change in current with pressure is shown to be highly sensitive to the change in interfacial polarization charge densities. The concept is verified by measuring the current versus voltage characteristics of an n-GaN∕u-Al0.2Ga0.8N∕n-GaN device under hydrostatic pressure over the range of 0–5 kbars. The measured current is found to decrease approximately linearly with applied pressure …