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2-DIMENSIONAL ELECTRON-GAS; EFFECT TRANSISTORS; MICROWAVE PERFORMANCE; GAN/ALGAN; MODFETS
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Quantitative Mobility Spectrum Analysis Of Algan∕Gan Heterostructures Using Variable-Field Hall Measurements, N. Biyikli, J. Xie, Y.-T. Moon, F. Yun, C.-G. Stefanita, S. Bandyopadhyay, Hadis Morkoç, I. Vurgaftman
Quantitative Mobility Spectrum Analysis Of Algan∕Gan Heterostructures Using Variable-Field Hall Measurements, N. Biyikli, J. Xie, Y.-T. Moon, F. Yun, C.-G. Stefanita, S. Bandyopadhyay, Hadis Morkoç, I. Vurgaftman
Electrical and Computer Engineering Publications
Carrier transport properties of AlGaN∕GaNheterostructures have been analyzed with the quantitative mobility spectrum analysis (QMSA) technique. The nominally undoped Al0.08Ga0.92N∕GaN sample was grown by plasma-assisted molecular beam epitaxy on a GaN/sapphire template prepared with hydride vapor phase epitaxy. Variable-magnetic-field Hall measurements were carried out in the temperature range of 5–300K and magnetic field range of 0.01–7T. QMSA was applied to the experimental variable-field data to extract the concentrations and mobilities associated with the high-mobility two-dimensional electron gas and the relatively low-mobility bulk electrons for the temperature range investigated. The mobilities at T=80K are found to be 7100 and 880cm2/Vs, respectively, …