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Modeling At The Nanometric Scale Of Interfacial Defects Of A Semiconductor Heterostructure In The Isotropic And Anisotropic Cases For The Study Of The Influence Of Stresses, Ahmed Boussaha, Rafik Makhloufi, Rachid Benbouta, Mourad Brioua
Modeling At The Nanometric Scale Of Interfacial Defects Of A Semiconductor Heterostructure In The Isotropic And Anisotropic Cases For The Study Of The Influence Of Stresses, Ahmed Boussaha, Rafik Makhloufi, Rachid Benbouta, Mourad Brioua
Emirates Journal for Engineering Research
This work aims to determine the effect of stresses caused by dislocation networks placed at the interface of a semiconductor heterostructure of the thin GaAs/Si system. In this case, we use a mathematical modeling by Fourier series expansion to numerically simulate the stresses for the two cases of isotropic and anisotropic elasticity in order to predict the mechanical behavior of the heterostructure in the presence of interfacial dislocations while respecting well-defined stress boundary conditions. The elastic stress relaxation is reached for a layer thickness threshold of the GaAs deposit on the Si substrate not exceeding 5 nm.
Fluid Factor Of Fracture And Seismic Velocity Response In Anisotropic Coal Beds, Li Qin, Ma Suibo, Zhao Bin
Fluid Factor Of Fracture And Seismic Velocity Response In Anisotropic Coal Beds, Li Qin, Ma Suibo, Zhao Bin
Coal Geology & Exploration
The storage and transport of gas and water in coal seam are related to the density, strike and filler of cracks. Research on the identification and prediction of coal seam cracks will be helpful to prevent and control disastrous accidents in coal mines, such as water inrush and gas outburst. It plays an important role in the safety evaluation of coal mining. Based on the theory of fracture equivalent model, the variation characteristics of fluid factor in coal seam crevices with different fillings and fracture weaknesses parameters(fracture density, aspect ratio, volume modulus, shear modulus, Lamé parameters) are analyzed by combining …
Effect Of Thermal Stress And Magnetic Field On Propagation Of Transverse Wave In An Anisotropic Incompressible Dissipative Initially Stressed Plate, M. M. Selim
Applied Mathematics & Information Sciences
In the present paper, we extend our previous work of the thermal effects on propagation of transverse waves in anisotropic incompressible dissipative pre-stressed plate, to investigate the effect of both thermal stress and magnetic field on transverse waves propagation in the medium. Biot incremental deformation theory has been used. The governing equations of transverse wave propagation are derived considering the magnetic forces applied on the plate through Maxwell equation. The influences of changes in anisotropy-type, thermal stress, initial stresses and magnetic field are investigated. The velocities of propagation as well as damping are discussed. Analytical analysis and Numerical computations reveal …
Thermal Effects On Propagation Of Transverse Waves In Anisotropic Incompressible Dissipative Pre-Stressed Plate, M. M. Selim
Thermal Effects On Propagation Of Transverse Waves In Anisotropic Incompressible Dissipative Pre-Stressed Plate, M. M. Selim
Applied Mathematics & Information Sciences
In this paper an attempt has been made to find a simple form of the thermal effects on transverse waves propagating in an anisotropic incompressible dissipative pre-stressed plate in the context of Biot’s theory. The governing equations are derived and the velocities of propagation as well as damping are discussed. The influences of changes in anisotropy-type, initial and thermal stresses are discussed. Analytical analysis reveals that the velocities of the transverse waves depend upon the anisotropy as well as the initial and thermal stresses present in the medium. Numerical computation shows that the variation in the parameters associated with anisotropy …
Electromagnetic Field And Rotation Effects On S-Waves Propagation In A Non-Homogeneous Anisotropic Incompressible Medium Under Initial Stress And Gravity Field, S. M. Abo-Dahab
Applied Mathematics & Information Sciences
In this paper, shear waves propagation in a non-homogeneous anisotropic incompressible medium under influence of the electromagnetic field, gravity field, rotation and initially stressed medium has been studied. Analytical analysis reveals that the velocity of propagation of the shear waves depends upon the direction of propagation, the anisotropy, magnetic field, rotation, gravity field, non-homogeneity of the medium, and the initial stress. The frequency equation that determines the velocity of the shear waves has been obtained. The dispersion equations have been obtained and investigated for different cases. In fact, these equations are an agreement with the corresponding classical results when the …
Development Of An Anisotropic, Selective Polycrystalline Silicon Dry Etch Process, Randy Supczak
Development Of An Anisotropic, Selective Polycrystalline Silicon Dry Etch Process, Randy Supczak
Journal of the Microelectronic Engineering Conference
The development of a polysilicon dry etch process that would result in anisotropic etch profiles as well as high selectivity to photoresist and silicon dioxide has been studied. It was found that decreasing the amount of fluorine (SF6) in the plasma significantly increased the polysilicon etch rate while only increasing the etch rate of silicon dioxide slightly. Two optimal processes were found: One that emphasized anisotropy (70% SF6 flow, 90mTorr pressure, and 200W RF power) and one that emphasized Si02 selectivity (70% SF6 flow, 23OmTorr pressure, and 200W RF power).
Development Of An Anisotropic, Highly Selective Tungsten Silicide Dry Etch Process, Thomas Schulte
Development Of An Anisotropic, Highly Selective Tungsten Silicide Dry Etch Process, Thomas Schulte
Journal of the Microelectronic Engineering Conference
The development of an anisotopic Tungsten Suicide etch that will provide good selectivity to photoresist as well as an underlying oxide has been studied. It has been found that by reducing the amount of fluorine (SF6) in the system and increasing the chlorine concentration, slightly tapered sidewalls can be achieved without the use of a polymer forming gas. An optimum process was developed on an Applied Materials P-5000 MxP system. A condition of 10 sccm SF6, 40 sccm Cl2, 20 sccm 11e02 at 30 mTorr, and 400W presents slightly tapered sidewalls with within wafer uniformity of 4.85%. The selectivity of …