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Effects Of Sputter Deposition Parameters On Stress In Tantalum Films With Applications To Chemical Mechanical Planarization Of Copper, Jeffrey L. Perry
Effects Of Sputter Deposition Parameters On Stress In Tantalum Films With Applications To Chemical Mechanical Planarization Of Copper, Jeffrey L. Perry
Theses
Attempts to introduce a CMP process for copper damascene features at Rochester Institute of Technology were stymied by adhesion failures of the Ta/Cu film stack. This work was undertaken to investigate the effect of stress in the films on adhesion and to develop a viable CMP process for Cu damascene technology. In depth studies of stress as a function of sputter deposition conditions revealed that stress in Ta layers could vary from -1700 MPa compression to +800 MPa tensile for deposition pressures over a range of 2-20 mTorr for films having a nominal thickness of 0.25 μm. For a fixed …