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Heterostructure Of 2d Materials: Hfs2/Hfo2/Si, Christopher J. Robledo
Heterostructure Of 2d Materials: Hfs2/Hfo2/Si, Christopher J. Robledo
MSU Graduate Theses
Heterostructures have been utilized in electronic devices for over 50 years with the proposal for the first heterostructure transistor in 1957. With the scaling of devices, it is necessary to create new heterostructures that will comply with Moore’s Law, as well as make devices faster and consume less power. Novel 2D materials, such as hafnium disulfide, have shown promise as an active channel layer, while hafnium dioxide is already proven to be a replacement of silicon dioxide for the gate insulating layer. However, fabrication techniques for wide-scale integration of these heterostructures have not yet been achieved. Also, the dielectric properties …
Development Of A Cvd Assisted Pld System For Growing Novel Materials, Sinjan Majumder
Development Of A Cvd Assisted Pld System For Growing Novel Materials, Sinjan Majumder
MSU Graduate Theses
The fundamental step for development of novel materials like semiconductors involves stacking of layers of thin films of materials with desired properties on a particular substrate. In order to study the properties of these materials for research purposes in the laboratory, development of a clean fabrication technique is essential. PLD is a technique employed for growing thin films using laser ablation of a target material. CVD is an alternate method used to deposit solid materials from a gaseous phase. However, combining these two techniques can enhance plume, gas and laser interaction to facilitate the growth of novel materials with new …