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Virginia Commonwealth University
ELECTRON VELOCITY OVERSHOOT; OPTICAL PHONON INSTABILITY; CARRIER TRANSPORT; GALLIUM-ARSENIDE; PICOSECOND RAMAN; GAAS; DYNAMICS; SPECTROSCOPY; LUMINESCENCE; DEVICES
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Subpicosecond Time-Resolved Raman Studies Of Field-Induced Transient Transport In An Inxga1−Xas-Based P-I-N Semiconductor Nanostructure, K. T. Tsen, Juliann G. Kiang, D. K. Ferry, Hadis Morkoç
Subpicosecond Time-Resolved Raman Studies Of Field-Induced Transient Transport In An Inxga1−Xas-Based P-I-N Semiconductor Nanostructure, K. T. Tsen, Juliann G. Kiang, D. K. Ferry, Hadis Morkoç
Physics Publications
Electron transient transport in an InxGa1−xAs-based (x=0.53) p-i-nnanostructure under the application of an electric field has been studied by time-resolvedRaman spectroscopy on a subpicosecond time scale and at T=300K. The experimental results reveal the time evolution of the electron distribution function and electron drift velocity with subpicosecond time resolution. These experimental results are compared with those of both InP-based and GaAs-based p-i-nnanostructures and provide a consistent understanding and better insight of electron transient transport phenomena in semiconductors.