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Spin Relaxation In A Germanium Nanowire, S. Patibandla, S. Pramanik, S. Bandyopadhyay, G. C. Tepper
Spin Relaxation In A Germanium Nanowire, S. Patibandla, S. Pramanik, S. Bandyopadhyay, G. C. Tepper
Electrical and Computer Engineering Publications
We report experimental study of spin transport in nanowirespin valve structures consisting of three layers—cobalt, germanium, and nickel. The spin diffusion length in the Ge is estimated to be about 400nm at 1.9K and the corresponding spin relaxation time is about 4ns. At 100K, the spin diffusion length drops to 180nm and the relaxation time is about 0.81ns. These short relaxation times, which depend weakly on temperature, are caused by strong surface roughness scattering that causes rapid spin relaxation via the Elliott-Yafet mode [Elliott, Phys. Rev.96, 266 (1954)].
Spectroscopic Ellipsometry And Absorption Study Of Zn1-Xmnxo/Al2o3 (0 <= X <= 0.08) Thin Films, Ghil Soo Lee, Ho Suk Lee, Tae Dong Kang, Hosun Lee, C. Liu, B. Xiao, Ü. Özgür, H. Morkoç
Spectroscopic Ellipsometry And Absorption Study Of Zn1-Xmnxo/Al2o3 (0 <= X <= 0.08) Thin Films, Ghil Soo Lee, Ho Suk Lee, Tae Dong Kang, Hosun Lee, C. Liu, B. Xiao, Ü. Özgür, H. Morkoç
Electrical and Computer Engineering Publications
We grow Zn1−xMnxO∕Al2O3 (0⩽x⩽0.08)thin films on sapphire (0001) using radio-frequency sputtering deposition method with Ar and various N2 flow rates. We examine the effect of N2 codoping on the band gap and Mn-related midgap absorption of (Zn,Mn)O. Using spectroscopic ellipsometry, we measure pseudodielectric functions in the spectral range between 1 and 4.5eV. Using the model of Holden et al. [T. Holden et al., Phys. Rev. B56, 4037 (1997)], we determine the uniaxial (Zn,Mn)O dielectric function and the E0 band-gapenergy. The fitted band gap does not change appreciably with increasing Mn composition up to 2%. We find a very large …