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Admittance Of Cds Nanowires Embedded In Porous Alumina Template, A. Varfolomeev, D. Zaretsky, V. Pokalyakin, S. Tereshin, S. Pramanik, S. Bandyopadhyay
Admittance Of Cds Nanowires Embedded In Porous Alumina Template, A. Varfolomeev, D. Zaretsky, V. Pokalyakin, S. Tereshin, S. Pramanik, S. Bandyopadhyay
Electrical and Computer Engineering Publications
CdSnanowires of 10nm diameter, electrodeposited in porous alumina films, had shown a conductance bistability in the past [Appl. Phys. Lett.76, 460 (2000)]. The conductance has a high (ON) and a low (OFF) state. In the ON state, different sets of nanowires display qualitatively different relation between the conductance and capacitance. We propose a model to explain this anomalous behavior. Based on this model, we predict that the inelastic mean free path of electrons in the nanowires is 3–3.5nm at room temperature. This short mean free path may be a consequence of acoustic phonon confinement.