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Virginia Commonwealth University
Electrical and Computer Engineering Publications
4H SILICON-CARBIDE; TRANSIENT SPECTROSCOPY; DEFECT CENTERS; ANNIHILATION
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Effect Of C∕Si Ratio On Deep Levels In Epitaxial 4h–Sic, C. W. Litton, D. Johnstone, S. Akarca-Biyikli, K. S. Ramaiah, I. Bhat, T. P. Chow, J. K. Kim, E. F. Schubert
Effect Of C∕Si Ratio On Deep Levels In Epitaxial 4h–Sic, C. W. Litton, D. Johnstone, S. Akarca-Biyikli, K. S. Ramaiah, I. Bhat, T. P. Chow, J. K. Kim, E. F. Schubert
Electrical and Computer Engineering Publications
Changing the ratio of carbon to silicon during the epitaxial 4H–SiC growth is expected to alter the dominant deep level trap, which has been attributed to a native defect. The C∕Si ratio was changed from one to six during epitaxialgrowth of SiC. Diodes fabricated on the epitaxial layer were then characterized using current-voltage and deep level transient spectroscopy. The single peak at 340K (Z1/Z2 peak), was deconvolved into two traps, closely spaced in energy. The concentration of one of the Z1/Z2 traps decreased with increasing C∕Si ratio. This result opposes theoretical predictions of carboninterstitial components, and supports assignment to a …