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Inas Quantum Dot Vertical-Cavity Lasers, Alexander R. Albrecht
Inas Quantum Dot Vertical-Cavity Lasers, Alexander R. Albrecht
Physics & Astronomy ETDs
Edge-emitting semiconductor lasers with self-assembled InAs quantum dot (QD) active regions have demonstrated excellent device performance, including low sensitivity to operating temperature and record-low thresholds. In this dissertation, the application of QDs in vertical-cavity lasers (VCLs) is investigated. QDs can reach an emission wavelength up to 1300 nm on GaAs substrate. Key design and device processing issues are discussed and vertical-cavity surface emitting lasers (VCSELs) with both optical and electrical excitation are fabricated. VCSEL diodes with distributed Bragg reflectors (DBRs) formed by selective wet oxidation of AlAs, as well as standard GaAs/AlGaAs mirrors were processed. The latter performed better due …