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Cmos Rf Cituits Sic] Variability And Reliability Resilient Design, Modeling, And Simulation, Yidong Liu
Cmos Rf Cituits Sic] Variability And Reliability Resilient Design, Modeling, And Simulation, Yidong Liu
Electronic Theses and Dissertations
The work presents a novel voltage biasing design that helps the CMOS RF circuits resilient to variability and reliability. The biasing scheme provides resilience through the threshold voltage (VT) adjustment, and at the mean time it does not degrade the PA performance. Analytical equations are established for sensitivity of the resilient biasing under various scenarios. Power Amplifier (PA) and Low Noise Amplifier (LNA) are investigated case by case through modeling and experiment. PTM 65nm technology is adopted in modeling the transistors within these RF blocks. A traditional class-AB PA with resilient design is compared the same PA without such design …
Study Of Esd Effects On Rf Power Amplifiers, Raju, Divya Narasimha
Study Of Esd Effects On Rf Power Amplifiers, Raju, Divya Narasimha
Electronic Theses and Dissertations
Today, ESD is a major consideration in the design and manufacture of ICs. ESD problems are increasing in the electronics industry because of the increasing trend toward higher speed and smaller device sizes. There is growing interest in knowing the effects of ESD protection circuit on the performance of semiconductor integrated circuits (ICs) because of the impact it has on core RF circuit performance. This study investigated the impact of ESD protection circuit on RF Power amplifiers. Even though ESD protection for digital circuits has been known for a while, RF-ESD is a challenge. From a thorough literature search on …
Design And Simulation Of Cmos Active Mixers, Allen Gibson
Design And Simulation Of Cmos Active Mixers, Allen Gibson
Electronic Theses and Dissertations
This paper introduces a component of the Radio Frequency transceiver called the mixer. The mixer is a critical component in the RF systems, because of its ability for frequency conversion. This passage focuses on the design analysis and simulation of multiple topologies for the active down-conversion mixer. This mixer is characterized by its important design properties which consist of conversion gain, linearity, noise figure, and port isolation. The topologies that are given in this passage range from the most commonly known mixer design, to implemented design techniques that are used to increase the mixers important design properties as the demand …
Low Noise, Narrow Optical Linewidth Semiconductor-Based Optical Comb Source And Low Noise Rf Signal Generation, Ibrahim Tuna Ozdur
Low Noise, Narrow Optical Linewidth Semiconductor-Based Optical Comb Source And Low Noise Rf Signal Generation, Ibrahim Tuna Ozdur
Electronic Theses and Dissertations
Recently optical frequency combs and low noise RF tones are drawing increased attention due to applications in spectroscopy, metrology, arbitrary waveform generation, optical signal processing etc. This thesis focuses on the generation of low noise RF tones and stabilized optical frequency combs. The optical frequency combs are generated by a semiconductor based external cavity mode-locked laser with a high finesse intracavity etalon. In order to get the lowest noise and broadest bandwidth from the mode-locked laser, it is critical to know the free spectral range (FSR) of the etalon precisely. First the etalon FSR is measured by using the modified …
High Linearity 5.8 Ghz Power Amplifier With An Internal Linearizer, Yiheng Wang
High Linearity 5.8 Ghz Power Amplifier With An Internal Linearizer, Yiheng Wang
Electronic Theses and Dissertations
A 5.8 GHz RF Power Amplifier (PA) is designed and fabricated in this work, which has very high linearity through a built-in linearizer. The PA is designed, post-layout simulated by Agilent Advanced Design System (ADS) software and fabricated by Win-Semiconductors 0.15µm pHEMT process technology. The post-layout simulation results illustrate the power amplifier can obtained an output power of 23.98 dBm, a power gain of 32.28 dB and a power added efficiency (PAE) of 29% at saturation region, the 3rd intermodulation distortion (IMD3) of -37.7 dBc at 0 dBm input power is attained when operation frequency is 5.8 GHz. We finally …