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Double Amorphous Silicon-Carbide P-Layer Structures Producing Highly Stabilized Pin-Type Protocrystalline Silicon Multilayer Solar Cells, Joshua M. Pearce, Seung Yeop Myong, Koeing Su Lim
Double Amorphous Silicon-Carbide P-Layer Structures Producing Highly Stabilized Pin-Type Protocrystalline Silicon Multilayer Solar Cells, Joshua M. Pearce, Seung Yeop Myong, Koeing Su Lim
Joshua M. Pearce
We have applied double p-type amorphous silicon-carbide (p-a-SiC:H) layer structures to pin-type protocrystalline silicon(pc-Si:H)multilayersolar cells. The less-pronounced initial short-wavelength quantum efficiency variation against the biased voltage and the wide overlap of dark current—voltage (JD-V) and short-circuit current—open-circuit voltage (Jsc-Voc) characteristics prove that the double p-a-SiC:H layer structure successfully reduces recombination at the p∕iinterface. Therefore, we achieved highly stabilized efficiency of 9.0% without any backreflector.