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Self-Assembled In0.5Ga0.5As Quantum Dots On Gap, Yuncheng Song, Paul J. Simmonds, Minjoo Larry Lee
Self-Assembled In0.5Ga0.5As Quantum Dots On Gap, Yuncheng Song, Paul J. Simmonds, Minjoo Larry Lee
Paul J. Simmonds
We demonstrate the growth and luminescence of coherently strained In0.5Ga0.5As self-assembled quantum dots on GaP. Cross-sectional and planar-view transmission electron microscopy confirmed the dislocation-free nature of the In0.5Ga0.5As quantum dots and GaP cap layers. Intense photoluminescence from the quantum dots was measured at 80 K and was visible to the unaided eye in ambient lighting. The photoluminescence results show that emission energy can be controlled by varying the In0.5Ga0.5As deposition thickness. In combination with recent advances in the growth of GaP on Si, the In0.5Ga0.5 …
Tensile Strained Iii-V Self-Assembled Nanostructures On A (110) Surface, Minjoo L. Lee, Paul J. Simmonds
Tensile Strained Iii-V Self-Assembled Nanostructures On A (110) Surface, Minjoo L. Lee, Paul J. Simmonds
Paul J. Simmonds
The vast majority of research on epitaxial quantum dots use compressive strain as the driving force for self-assembly on the (001) surface, with InAs/GaAs(001) and Ge/Si(001) being the best-known examples. In this talk, I will discuss our work on determining the feasibility of growing coherent, tensile-strained III-V nanostructures on a (110) surface. GaP on GaAs(110) was chosen as an initial test system. It is hoped that our efforts on self-assembled, tensile-strained dots on a (110) surface will lead the way to new devices exploiting the fundamental differences between the (110) and (001) surfaces. Furthermore it is anticipated that this work …