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Self-Assembled In0.5Ga0.5As Quantum Dots On Gap, Yuncheng Song, Paul J. Simmonds, Minjoo Larry Lee

Paul J. Simmonds

We demonstrate the growth and luminescence of coherently strained In_0.5Ga_0.5As self-assembled quantum dots on GaP. Cross-sectional and planar-view transmission electron microscopy confirmed the dislocation-free nature of the In_0.5Ga_0.5As quantum dots and GaP cap layers. Intense photoluminescence from the quantum dots was measured at 80 K and was visible to the unaided eye in ambient lighting. The photoluminescence results show that emission energy can be controlled by varying the In_0.5Ga_0.5As deposition thickness. In combination with recent advances in the growth of GaP on Si, the In_0.5Ga_{0.5 …}