Open Access. Powered by Scholars. Published by Universities.®
- Institution
- Publication Type
Articles 1 - 3 of 3
Full-Text Articles in Entire DC Network
Piezoresistive Models For Polysilicon With Bending Or Torsional Loads, Gerrit T. Larsen
Piezoresistive Models For Polysilicon With Bending Or Torsional Loads, Gerrit T. Larsen
Theses and Dissertations
This thesis presents new models for determining piezoresistive response in long, thin polysilicon beams with either axial and bending moment inducing loads or torsional loads. Microelectromechanical (MEMS) test devices and calibration methods for finding the piezoresistive coefficients are also presented for both loading conditions. For axial and bending moment inducing loads, if the piezoresistive coefficients are known, the Improved Piezoresistive Flexure Model (IPFM) is used to find the new resistance of a beam under stress. The IPFM first discretizes the beam into small volumes represented by resistors. The stress that each of these volumes experiences is calculated, and the stress …
Nanoenabled Microelectromechanical Sensor For Volatile Organic Chemical Detection, Chiara Zuniga, Matteo Rinaldi, Samuel M. Khamis, A. T. Johnson, Gianluca Piazza
Nanoenabled Microelectromechanical Sensor For Volatile Organic Chemical Detection, Chiara Zuniga, Matteo Rinaldi, Samuel M. Khamis, A. T. Johnson, Gianluca Piazza
Matteo Rinaldi
A nanoenabled gravimetric chemical sensor prototype based on the large scale integration of single-stranded DNA (ss-DNA) decorated single-walled carbon nanotubes (SWNTs) as nanofunctionalization layer for aluminum nitride contour-mode resonant microelectromechanical (MEM) gravimetric sensors has been demonstrated. The capability of two distinct single strands of DNA bound to SWNTs to enhance differently the adsorption of volatile organic compounds such as dinitroluene (simulant for explosive vapor) and dymethyl-methylphosphonate (simulant for nerve agent sarin) has been verified experimentally. Different levels of sensitivity (17.3 and 28 KHz µm^2/fg) due to separate frequencies of operation (287 and 450 MHz) on the same die have also …
Piezoresistive Feedback Control Of A Mems Thermal Actuator, Robert K. Messenger, Quentin Theodore Aten, Timothy W. Mclain, Larry L. Howell
Piezoresistive Feedback Control Of A Mems Thermal Actuator, Robert K. Messenger, Quentin Theodore Aten, Timothy W. Mclain, Larry L. Howell
Faculty Publications
Feedback control of MEMS devices has the potential to significantly improve device performance and reliability. One of the main obstacles to its broader use is the small number of on-chip sensing options available to MEMS designers. A method of using integrated piezoresistive sensing is proposed and demonstrated as another option. Integrated piezoresistive sensing utilizes the inherent piezoresistive property of polycrystalline silicon from which many MEMS devices are fabricated. As compliant MEMS structure’s flex to perform their functions, their resistance changes. That resistance change can be used to transduce the structures’ deflection into an electrical signal. The piezoresistive microdisplacement transducer (PMT) …