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Cdse Quantum Dots Synthesis Laboratory Course For High School Students, Danlin Zuo, Gyuseok Kim, David Jones Dec 2019

Cdse Quantum Dots Synthesis Laboratory Course For High School Students, Danlin Zuo, Gyuseok Kim, David Jones

Protocols and Reports

Cadmium selenide quantum dot is a fascinating subject for leading high school students to the quantum world. An 8-hour laboratory course for up to 12 high school students is proposed. The 8-hour course consist of two 4-hours sections. This laboratory course includes the quantum dot syntheses, absorption and emission characterization, and data analysis. The proposes process runs at relatively lower temperature which means safe and easy, and shows apparent experimental results.


Effect Of Annealing On The Contact Resistance Of Aluminum On A P-Type Substrate, Shrey Shah, George Patrick Watson Nov 2019

Effect Of Annealing On The Contact Resistance Of Aluminum On A P-Type Substrate, Shrey Shah, George Patrick Watson

Protocols and Reports

Aluminum contacts are widely used to form both ohmic and rectifying contacts. The process to form these contacts involves annealing, thus it is important to study the effect of annealing on the electrical properties of the contacts. Here, we present a way to measure the contact resistance of aluminum contacts formed on a p-type silicon substrate. It was found the contact resistivity decreased by an average of 18%. It was thus found that annealing at 400°C in a forming gas environment improves the electrical properties of aluminum contacts.


Influence Of Flow Rate, Nozzle Speed, Pitch And The Number Of Passes On The Thickness Of S1805 Photoresist In Suss Microtec As8 Spray Coater, Rohan Sanghvi, Gyuseok Kim Oct 2019

Influence Of Flow Rate, Nozzle Speed, Pitch And The Number Of Passes On The Thickness Of S1805 Photoresist In Suss Microtec As8 Spray Coater, Rohan Sanghvi, Gyuseok Kim

Tool Data

S1805 positive photoresist has been deposited on single crystalline Si wafers using a Suss MicroTec Alta Spray. The influence of flow rate, nozzle speed, pitch and number of passes on the thickness of the photoresist was studied. Results show that the thickness of S1805 is linearly proportional to the flow rate and number of passes, and inversely proportional to the nozzle speed and pitch.


Coronal Plane Spine Twisting Composes Shape To Adjust The Energy Landscape For Grounded Reorientation, J. Diego Caporale, Benjamin W. Mcinroe, Chenze Ning, Thomas Libby, Robert J. Full, Daniel E. Koditschek Sep 2019

Coronal Plane Spine Twisting Composes Shape To Adjust The Energy Landscape For Grounded Reorientation, J. Diego Caporale, Benjamin W. Mcinroe, Chenze Ning, Thomas Libby, Robert J. Full, Daniel E. Koditschek

Departmental Papers (ESE)

Despite substantial evidence for the crucial role played by an active backbone or spine in animal locomotion, its adoption in legged robots remains limited because the added mechanical complexity and resulting dynamical challenges pose daunting obstacles to characterizing even a partial range of potential performance benefits. This paper takes a next step toward such a characterization by exploring the quasistatic terrestrial self-righting mechanics of a model system with coronal plane spine twisting (CPST). Reduction from a full 3D kinematic model of CPST to a two parameter, two degree of freedom coronal plane representation of body shape affordance predicts a substantial ...


Influence Of Naoh Concentration On Transfer Process Of Graphene, Francisco Saldana, Chengyu Wen, George Patrick Watson Sep 2019

Influence Of Naoh Concentration On Transfer Process Of Graphene, Francisco Saldana, Chengyu Wen, George Patrick Watson

Protocols and Reports

The process of transferring a monolayer of graphene using two different concentrations of sodium hydroxide (NaOH) solution unto a silicon dioxide (SiO2) coated Si chip using electrochemistry was performed. The transfer process is crucial for the delamination of a continuous graphene monolayer film from copper foil. After examining and inspecting the integrity of the graphene monolayer, it was observed that the lower concentration to NaOH led to slower rate of hydrogen bubble generation; this condition was found to be less destructive and yielded a graphene film with fewer visible tears.


Reactive Ion Etching Selectivity Of Si/Sio2: Comparing Of Two fluorocarbon Gases Chf3 And Cf4, Meiyue Zhang, Pat Watson Mar 2019

Reactive Ion Etching Selectivity Of Si/Sio2: Comparing Of Two fluorocarbon Gases Chf3 And Cf4, Meiyue Zhang, Pat Watson

Protocols and Reports

Two reactive ion etching (RIE) processes were studied to show the relative etch selectivity between SiO2 and Si using two fluorocarbon gases, CF4 and CHF3. Results show that CHF3 gives better selectivity (16:1) over CF4 (1.2 :1). On the other hand, the etch rate of SiO2 of CF4 is approximately 52.8 nm/min, faster than CHF3 (32.4 nm/min).