Open Access. Powered by Scholars. Published by Universities.®

Digital Commons Network

Open Access. Powered by Scholars. Published by Universities.®

PDF

Mechanical Engineering

Selected Works

2010

Nipun Sinha

Articles 1 - 2 of 2

Full-Text Articles in Entire DC Network

100nm Thick Aluminum Nitride Based Piezoelectric Nano Switches Exhibiting 1mv Threshold Voltage Via Body-Biasing, Nipun Sinha, Zhijun Guo, Valeriy Felmetsger, Gianluca Piazza Dec 2009

100nm Thick Aluminum Nitride Based Piezoelectric Nano Switches Exhibiting 1mv Threshold Voltage Via Body-Biasing, Nipun Sinha, Zhijun Guo, Valeriy Felmetsger, Gianluca Piazza

Nipun Sinha

This paper reports on the first demonstration of aluminum nitride (AlN) piezoelectric logic switches that were fabricated with ultra-thin (100nm) AlN films and exhibit a 1 mV threshold voltage via the body-biasing scheme. The application of a relatively low (< 6 V) fixed potential to the body terminal of a 4-terminal switch has resulted in a repeatable threshold voltage of 1 mV. The nano-switch has been cycled to > 109 cycles and, although the contact resistance was found to be high (~ 1 MΩ), the nano-films have functioned throughout to show high piezoelectric nano-film reliability.


Demonstration Of Low Voltage And Functionally Complete Logic Operations Using Body-Biased Complementary And Ultra-Thin Aln Piezoelectric Mechanical Switches, Nipun Sinha, Timothy S. Jones, Zhijun Guo, Gianluca Piazza Dec 2009

Demonstration Of Low Voltage And Functionally Complete Logic Operations Using Body-Biased Complementary And Ultra-Thin Aln Piezoelectric Mechanical Switches, Nipun Sinha, Timothy S. Jones, Zhijun Guo, Gianluca Piazza

Nipun Sinha

This paper reports, for the first time, on the demonstration of low voltage and functionally complete logic elements (NAND and NOR) implemented by using body-biased complementary and ultra-thin (250 nm thick) Aluminum Nitride (AlN) based piezoelectric mechanical switches. This work presents, firstly, the importance of scaling AlN films for the demonstration of ultra-thin AlN switches and, secondly, the implementation of a new actuation scheme based on body biasing to lower the switch threshold voltage. Four of these ultra-thin switches were connected together to synthesize functionally complete MEMS logic gates (NAND and NOR) with a ± 2V swing and a body-bias …