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Studies Of The Initial Stage Of Silicon Carbide Growth On Silicon, Katherine Stewart Ziemer

Graduate Theses, Dissertations, and Problem Reports

The lack of understanding concerning the initial stage of silicon carbide (SiC) growth on silicon (Si) substrates gives rise to heated debates on the growth mechanisms, the characteristics of the "optimal" initial layers, and the processing parameters necessary to produce high-quality cubic or beta silicon carbide (beta-SiC) on these initial layers. If the potential of beta-SiC as a semiconductor for electronic devices is to be realized, the growth of the initial layers (i.e. the initial stage of growth) must be understood and then controlled.;This dissertation presents results from the comparison of the initial stages of beta-SiC growth by gas source …