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Improved Contacts And Device Performance In Mos2 Transistors Using 2d Semiconductor Interlayers, Kraig Andrews
Improved Contacts And Device Performance In Mos2 Transistors Using 2d Semiconductor Interlayers, Kraig Andrews
Wayne State University Dissertations
The rapid growth of modern electronics industry over the past half-century has been sustained by the continued miniaturization of silicon-based electronics. However, as fundamental limits approach, there is a need to search for viable alternative materials for next-generation electronics in the post-silicon era. Two-dimensional (2D) semiconductors such as transition metal dichalcogenides (TMDs) have attracted much attention due to their atomic thickness, absence of dangling bonds and moderately high carrier mobility. However, achieving low-resistance contacts has been major impediment in developing high-performance field-effect transistors (FETs) based on 2D semiconductors. A substantial Schottky barrier (SB) is often present at the metal/2D-semicondcutor interface, …
Optimization Of Transition-Metal Dichalcogenides Based Field- Effect- Transistors Via Contact Engineering, Meeghage Madusanka Perera
Optimization Of Transition-Metal Dichalcogenides Based Field- Effect- Transistors Via Contact Engineering, Meeghage Madusanka Perera
Wayne State University Dissertations
ABSTRACT
Optimization of Transition-Metal Dichalcogenides based Field- Effect-Transistors via contact engineering
by
Meeghage M Perera
September , 2016
Advisor : Dr. Zhixian Zhou
Major: Physics (Condensed mater physics/nano-electronics)
Degree: Doctor of Philosophy
Layered transition Metal Dichalcogenides (TMDs) have demonstrated a wide range of remarkable properties for applications in next generation nano-electronics. These systems have displayed many “graphene-like” properties including a relatively high carrier mobility, mechanical flexibility, chemical and thermal stability, and moreover offer the significant advantage of a substantial band gap. However, the fabrication of high performance field-effect transistors (FETs) of TMDs is challenging mainly due to the formation of …