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A Continuum Model On The Nanomesa And Nanowell Formation In Langmuir-Blodgett Ferroelectric Polymeric Films, Jiang Yu Li, Yang Luo, Mengjun Bai, Stephen Ducharme
A Continuum Model On The Nanomesa And Nanowell Formation In Langmuir-Blodgett Ferroelectric Polymeric Films, Jiang Yu Li, Yang Luo, Mengjun Bai, Stephen Ducharme
Stephen Ducharme Publications
Spontaneous crystalline nanomesa and nanowell formation has recently been discovered in polyvinylidene fluoride trifluoroethylene [P(VDF– TrFE)] copolymer films developed by Langmuir–Blodgett (LB) deposition. In this paper, we propose a continuum field model to analyze this remarkable phenomenon, consisting of kinematics, energetics, and kinetics of pattern formation and evolution in P(VDF–TrFE) films. Linear perturbation analysis has been carried out to analyze the stability and growth of patterns under small perturbations, and finite difference numerical simulations have been implemented to simulate the morphologies and evolutions of nanomesas and nanowells. The effects of film thickness and a number of other material parameters have …
Stephen Ducharme Publications 1983-2006
Stephen Ducharme Publications 1983-2006
Stephen Ducharme Publications
Citations (and some links) for 68 articles in refereed journals, 1 book chapter, 5 conference proceedings edited, and 35 conference proceedings papers. Current through April 2006.
Low-Voltage Operation Of Metal-Ferroelectric-Insulator-Semiconductor Diodes Incorporating A Ferroelectric Polyvinylidene Fluoride Copolymer Langmuir-Blodgett Film, A. Gerber, Hermann Kohlstedt, M. Fitsilis, R. Waser, T.J. Reese, Stephen Ducharme, E. Rije
Low-Voltage Operation Of Metal-Ferroelectric-Insulator-Semiconductor Diodes Incorporating A Ferroelectric Polyvinylidene Fluoride Copolymer Langmuir-Blodgett Film, A. Gerber, Hermann Kohlstedt, M. Fitsilis, R. Waser, T.J. Reese, Stephen Ducharme, E. Rije
Stephen Ducharme Publications
We report the electrical characteristics of metal-ferroelectric-insulator-semiconductor structures, where the ferroelectric layer is a Langmuir-Blodgett film of a copolymer of 70% vinylidene fluoride and 30% trifluoroethylene. The 36-nm thick copolymer films were deposited on thermally oxidized (10 nm SiO2) p-type silicon and covered with a gold gate electrode. Polarization-field hysteresis loops indicate polarization switching in the polymer film. The device capacitance shows hysteresis when cycling the applied voltage between ±3 V, exhibiting a zero-bias on/off capacitance ratio of over 3:1 and a symmetric memory window 1 V wide, with little evidence of bias that can arise from …
Effects Of Annealing Conditions On Ferroelectric Nanomesa Self-Assembly, Mengjun Bai, Matt Poulsen, Stephen Ducharme
Effects Of Annealing Conditions On Ferroelectric Nanomesa Self-Assembly, Mengjun Bai, Matt Poulsen, Stephen Ducharme
Stephen Ducharme Publications
We report the results of studies of the effects of annealing conditions on the morphology of ferroelectric nanomesas. The nanomesa patterns were fabricated by self-assembly from continuous ultra-thin Langmuir–Blodgett films of copolymers of vinylidene fluoride and trifluoroethylene. Annealing in the paraelectric phase induced surface reorganization into disc-shaped ferroelectric nanomesas approximately 9 nm thick and 100 nm in diameter. Several factors affect the nanomesa dimensions, such as polymer composition, substrate material, deposition conditions, and annealing temperature. The height and diameter of the nanomesas both increase with increasing annealing temperature. Annealing studies in the ferroelectric–paraelectric coexistence region show that only the paraelectric …