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Missouri University of Science and Technology
<p>Ion implantation -- Computer simulation<br />Semiconductor doping -- Computer simulation<br />Electron paramagnetic resonance spectroscopy</p>
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Temperature Dependence Of The Formation Of An Amorphous Layer In Ion-Implanted Silicon, Gary Keith Woodward
Temperature Dependence Of The Formation Of An Amorphous Layer In Ion-Implanted Silicon, Gary Keith Woodward
Masters Theses
"Electron spin resonance (ESR) has been used to study the temperature dependence of the formation of an amorphous damaged layer produced by ion implantation in silicon.
Undoped silicon wafers were implanted with N+, Ar+, and Kr+ ions at 20 keV and dose rates less than .36 µa/cm2. Implant temperatures ranged from room temperature to 250°C. ESR measurements were made at room temperature on these wafers. The only ESR signal found was that associated with amorphous silicon. The ESR signal amplitude for a given ion and temperature increased approximately linearly with dose up to …