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High-Responsivity Plasmonics-Based Gaas Metal-Semiconductor-Metal Photodetectors, Ayman Karar, Narottam Das, Chee Leongtan, Kamal Alameh, Yong Tak Lee, Fouad Karouta
High-Responsivity Plasmonics-Based Gaas Metal-Semiconductor-Metal Photodetectors, Ayman Karar, Narottam Das, Chee Leongtan, Kamal Alameh, Yong Tak Lee, Fouad Karouta
Research outputs 2011
We report the experimental characterization of high-responsivity plasmonics-based GaAs metal-semiconductor-metal photodetector (MSM-PD) employing metal nano-gratings. Both the geometry and light absorption near the designed wavelength are theoretically and experimentally investigated. The measured photocurrent enhancement is 4-times in comparison with a conventional single-slit MSM-PD. We observe reduction in the responsivity as the bias voltage increases and the input light polarization varies. Our experimental results demonstrate the feasibility of developing a high-responsivity, low bias-voltage high-speed MSM-PD.
Metal-Semiconductor-Metal (Msm) Photodetectors With Plasmonic Nanogratings, Narottam K. Das, Ayman Karar, C L Tan, Mikhail Vasiliev, Kamal Alameh, Yong Tak Lee
Metal-Semiconductor-Metal (Msm) Photodetectors With Plasmonic Nanogratings, Narottam K. Das, Ayman Karar, C L Tan, Mikhail Vasiliev, Kamal Alameh, Yong Tak Lee
Research outputs 2011
We discuss the light absorption enhancement factor dependence on the design of nanogratings inscribed into metal-semiconductor-metal photodetector (MSM-PD) structures. These devices are optimized geometrically, leading to light absorption improvement through plasmon-assisted effects. Finite-difference time-domain (FDTD) simulation results show ~50 times light absorption enhancement for 850 nm light due to improved optical signal propagation through the nanogratings. Also, we show that the light absorption enhancement is strongly dependent on the nanograting shapes in MSM-PDs.