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Spectroscopic Characterization Of The Ground And Low-Lying Electronic States Of Ga2n Via Anion Photoelectron Spectroscopy., S M. Sheehan, Giovanni Meloni, B F. Parsons, N Wehres, D M. Neumark

Chemistry Faculty Publications

Anion photoelectron spectra of Ga2N− were measured at photodetachment wavelengths of 416nm(2.978eV), 355nm(3.493eV), and 266nm(4.661eV). Both field-free time-of-flight and velocity-map imaging methods were used to collect the data. The field-free time-of-flight data provided better resolution of the features, while the velocity-map-imaging data provided more accurate anisotropy parameters for the peaks. Transitions from the ground electronic state of the anion to two electronic states of the neutral were observed and analyzed with the aid of electronic structure calculations and Franck-Condon simulations. The ground-state band was assigned to a transition between linear ground states of Ga2N−(XΣg+1) and Ga2N(XΣu+2), yielding the electron affinity …