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Physical Sciences and Mathematics

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The University of Akron

2006

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High-Voltage Parallel Writing On Iron Nitride Thin Films, N. Farkas, J. D. Ehrman, Edward A. Evans, R. D. Ramsier, J. A. Dagata Jul 2006

High-Voltage Parallel Writing On Iron Nitride Thin Films, N. Farkas, J. D. Ehrman, Edward A. Evans, R. D. Ramsier, J. A. Dagata

Chemical, Biomolecular, and Corrosion Engineering Faculty Research

We report large area patterning of sputter-deposited FeN thin films by a high-voltage parallel writing technique that was recently developed to modify ZrN surfaces. Systematically patterned 15-100-nm-thick FeN films consisting of features with well-defined sizes and shapes are obtained by applying high dc voltages between a stamp and the samples. During the process the oxide dissolves, exposing the substrate beneath. This controlled breakdown eliminates the need for any postexposure etching. The single-step imprinting method presented here provides an emerging route to fabricate isolated FeN geometrical structures on silicon substrates for magnetic applications. (c) 2006 American Vacuum Society.


Dynamic Contact Angle In Rim Instability Of Dewetting Holes, Sung-Hwan Choi, Bi-Min Zhang Newby Feb 2006

Dynamic Contact Angle In Rim Instability Of Dewetting Holes, Sung-Hwan Choi, Bi-Min Zhang Newby

Chemical, Biomolecular, and Corrosion Engineering Faculty Research

The effects of dynamic contact angle (theta(d)), between a substrate and the melt of a dewetting polymer thin film, on the evolution of rim instabilities of dewetting holes were reported. Various theta(d)'s were achieved by covering SiOx surfaces with different coverage of octadecyltrichlorosilane. On each surface, the morphology of the dewetting holes was examined in detail as the hole grew to a certain size. Rim instabilities, in terms of undulations in both r and z directions, became more pronounced as theta(d) increased, under which condition, narrower and higher rims were also observed. Experimentally, atomic force microscopic scans of the rim …