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Tensile Strained Island Growth At Step-Edges On Gaas(110), Paul J. Simmonds, M. L. Lee
Tensile Strained Island Growth At Step-Edges On Gaas(110), Paul J. Simmonds, M. L. Lee
Paul J. Simmonds
We report the growth of tensile strained GaP islands on a GaAs(110) surface. Three-dimensional island formation proceeds via a step-edge nucleation process. To explain the dislocation-free nature of these islands, we consider the kinetics of strain relief within the context of a model for dislocation glide as a function of surface orientation and sign of strain.