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The Effects Of Rare Earth Doping On Gallium Nitride Thin Films, Stephen R. Mchale
The Effects Of Rare Earth Doping On Gallium Nitride Thin Films, Stephen R. Mchale
Theses and Dissertations
The thermal neutron capture cross section of the rare earth (RE) metal isotope Gd-157 is the largest of all known natural elements, which distinguishes the material as a logical candidate for neutron detection. To address an incomplete understanding of rare earth doped Gallium Nitride (GaN) materials, investigations of the surface electronic structure and interface properties of GaN thin films doped with rare earths (Yb, Er, Gd) were undertaken. Lattice ion occupation, bonding, rare earth 4f occupation, and gold Schottky barrier formation were examined using synchrotron photoemission spectroscopy. Measured Debye temperatures indicate substitutional occupation of Ga sites by RE ions. The …
Investigation Of Gate Leakage Current In Nitrogen-Irradiated Algan/Gan Heterostructures, Rose E. May
Investigation Of Gate Leakage Current In Nitrogen-Irradiated Algan/Gan Heterostructures, Rose E. May
Theses and Dissertations
Due to commercial and government interest in devices capable of functioning in high-power, high-frequency space applications, radiation tolerant AlGaN/GaN devices have been under study in recent years. Passivation of the AlGaN surface by (Si3N4) prevents electron trapping and enhances the 2DEG, but it also increases gate leakage currents, which can lead to device failure. This study sought information about current leakage mechanisms by introducing displacement damage close to the Si3N4/AlGaN interface. The effects of irradiation damage around the Si3N4/AlGaN interface on irradiation-induced leakage current were investigated for three …