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Articles 1 - 9 of 9
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Investigating Quantum Oscillations In The Thermal Coefficient Of Resistivity Of Ultra-Thin Ag Capping Layers On Cu For Ic Interconnect Applications, Elroy Tatem
Legacy Theses & Dissertations (2009 - 2024)
As the semiconductor industry continues to scale feature sizes, scattering from phonons, surfaces, and grain boundaries result in an increase of metal interconnect resistivity in state-of-the-art integrated circuits (ICs). The interconnect chapter of the 2011 International Technology Roadmap for Semiconductors (ITRS) stated that there are currently no manufacturable solutions in the near term for suitable Cu replacements. Previous studies of thin Ag films deposited on Cu demonstrated oscillations in the electron-phonon interactions within the bilayer system. This thesis investigates oscillations in the resistive properties of the Ag/Cu bilayer system and discusses the applicability of these oscillations to the resistivity challenges …
Nanostructured Tiox As A Catalyst Support Material For Proton Exchange Membrane Fuel Cells, Richard Phillips
Nanostructured Tiox As A Catalyst Support Material For Proton Exchange Membrane Fuel Cells, Richard Phillips
Legacy Theses & Dissertations (2009 - 2024)
Recent interest in the development of new catalyst support materials for proton exchange membrane fuel cells (PEMFCs) has stimulated research into the viability of TiO2-based support structures. Specifically, substoichiometric TiO2 (TiOx) has been reported to exhibit a combination of high conductivity, stability, and corrosion resistance. These properties make TiOx-based support materials a promising prospect when considering the inferior corrosion resistance of traditional carbon-based supports. This document presents an investigation into the formation of conductive and stable TiOx thin films employing atomic layer deposition (ALD) and a post deposition oxygen reducing anneal (PDORA). …
The Influence Of Impurities And Metallic Capping Layers On The Microstructure Of Copper Interconnects, Michael Rizzolo
The Influence Of Impurities And Metallic Capping Layers On The Microstructure Of Copper Interconnects, Michael Rizzolo
Legacy Theses & Dissertations (2009 - 2024)
As copper interconnects have scaled to ever smaller dimensions on semiconductor devices, the microstructure has become increasingly detrimental for performance and reliability. Small grains persist in interconnects despite annealing at high temperatures, leading to higher line resistance and more frequent electromigration-induced failures. Conventionally, it was believed that impurities from the electrodeposition pinned grain growth, but limitations in analytical techniques meant the effect was inferred rather than observed.
Fundamental Studies Of Supported Graphene Interfaces : Defect Density Of States In Graphene Field Effect Transistors (Fets) And Ideal Graphene - Silicon Schottky Diodes, Dhiraj Sinha
Legacy Theses & Dissertations (2009 - 2024)
The physics of transport in atomically thin 2D materials is an active area of research, important for understanding fundamental properties of reduced dimensional materials and for applications. New phenomena based on graphene may include properties of topologically protected insulators. Applications of these materials are envisioned in electronics, optoelectronics and spintronics.
Development Of Novel Technologies To Enhance Performance And Reliability Of Iii-Nitride Avalanche Photodiodes, Puneet Harischandra Suvarna
Development Of Novel Technologies To Enhance Performance And Reliability Of Iii-Nitride Avalanche Photodiodes, Puneet Harischandra Suvarna
Legacy Theses & Dissertations (2009 - 2024)
Solar-blind ultraviolet avalanche photodiodes are an enabling technology for applications in the fields of astronomy, communication, missile warning systems, biological agent detection and particle physics research. Avalanche photodiodes (APDs) are capable of detecting low-intensity light with high quantum efficiency and signal-to-noise ratio without the need for external amplification. The properties of III-N materials (GaN and AlGaN) are promising for UV photodetectors that are highly efficient, radiation-hard and capable of visible-blind or solar-blind operation without the need for external filters. However, the realization of reliable and high performance III-N APDs and imaging arrays has several technological challenges. The high price and …
Growth And Characterization Of Graphene On Cuni Substrates, Parul Tyagi
Growth And Characterization Of Graphene On Cuni Substrates, Parul Tyagi
Legacy Theses & Dissertations (2009 - 2024)
Graphene is a single layer of sp2 bonded carbon atoms that crystallizes in the honeycomb structure. Because of its true two-dimensional structure, it has very unique electrical properties, including a very high carrier mobility that is symmetric for holes and electrons. To realize these unique properties, it is important to develop a method for growing graphene films with uniform thickness and low defect density. One of the most popular methods of growth is by chemical vapor deposition on Cu substrates, because it is self-limited. However many applications require the growth of graphene films that are more than one atomic layer …
Experimental And Simulation Studies Of Printability Of Buried Euv Mask Defects And Study Of Euv Reflectivity Loss Mechanisms Due To Standard Euv Mask Cleaning Processes, Mihirkant Upadhyaya
Experimental And Simulation Studies Of Printability Of Buried Euv Mask Defects And Study Of Euv Reflectivity Loss Mechanisms Due To Standard Euv Mask Cleaning Processes, Mihirkant Upadhyaya
Legacy Theses & Dissertations (2009 - 2024)
There's a big push for development and commercialization of extreme ultraviolet (EUV) lithography for high-volume semiconductor manufacturing of 14 nm half-pitch patterning and beyond. One of the primary concerns for making this a reality has been the ability to achieve defect-free masks. My study is focused on two aspects related to the performance degradation of the EUV masks namely EUV mask cleaning induced reflectivity loss mechanisms, and the buried multilayer phase defects in EUV masks.
Oxide Defect Engineering Methods For Valence Change (Vcm) Resistive Random Access Memories, Jihan Ocampo Capulong
Oxide Defect Engineering Methods For Valence Change (Vcm) Resistive Random Access Memories, Jihan Ocampo Capulong
Legacy Theses & Dissertations (2009 - 2024)
Electrical switching requirements for resistive random access memory (ReRAM) devices are multifaceted, based on device application. Thus, it is important to obtain an understanding of these switching properties and how they relate to the oxygen vacancy concentration and oxygen vacancy defects. Oxygen vacancy defects in the switching oxide of valence-change-based ReRAM (VCM ReRAM) play a significant role in device switching properties. Oxygen vacancies facilitate resistive switching as they form the conductive filament that changes the resistance state of the device. This dissertation will present two methods of modulating the defect concentration in VCM ReRAM composed of Pt/HfOx/Ti stack: …
Metal Oxide Growth, Spin Precession Measurements And Raman Spectroscopy Of Cvd Graphene, Akitomo Matsubayashi
Metal Oxide Growth, Spin Precession Measurements And Raman Spectroscopy Of Cvd Graphene, Akitomo Matsubayashi
Legacy Theses & Dissertations (2009 - 2024)
The focus of this dissertation is to explore the possibility of wafer scale graphene-based spintronics. Graphene is a single atomic layer of sp2 bonded carbon atoms that has attracted much attention as a new type of electronic material due to its high carrier mobilities, superior mechanical properties and extremely high thermal conductivity. In addition, it has become an attractive material for use in spintronic devices owing to its long electron spin relaxation time at room temperature. This arises in part from its low spin-orbit coupling and negligible nuclear hyperfine interaction. In order to realize wafer scale graphene spintronics, utilization of …