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Epitaxial Growth Of Semiconductors And Chiral Metal Surfaces Using Spin Coating And Electrodeposition, Meagan V. Kelso
Epitaxial Growth Of Semiconductors And Chiral Metal Surfaces Using Spin Coating And Electrodeposition, Meagan V. Kelso
Doctoral Dissertations
"The current primary methods for epitaxial growth are energy intensive, requiring high temperature or high vacuum to obtain quality thin films. This dissertation explores the solution process methods of electrodeposition and spin coating for growth of epitaxial thin films. First, a method is developed to directly electrodeposit epitaxial CH3NH3PbI3 perovskite for solar cells on single crystal Au by electrochemically reducing I2 in organic solution. Perovskite is a newly explored material for solar cells, and its efficiency may be further improved by increasing the crystalline order. Second, a study on epitaxially electrodeposited chiral metal surfaces …
Electrodeposited Semiconductor Nanostructures & Epitaxial Thin Films For Flexible Electronics, Naveen Kumar Mahenderkar
Electrodeposited Semiconductor Nanostructures & Epitaxial Thin Films For Flexible Electronics, Naveen Kumar Mahenderkar
Doctoral Dissertations
"Single-crystal Si is the bedrock of semiconductor devices due to the high crystalline perfection which minimizes electron-hole recombination, and the dense native silicon oxide which minimizes surface states. To expand the palette of electronic materials beyond planar Si, an inexpensive source of highly ordered material is needed that can serve as an inert substrate for the epitaxial growth of grain boundary-free semiconductors, photonic materials, and superconductors. There is also a need for a simple, inexpensive, and scalable fabrication technique for the growth of semiconductor nanostructures and thin films. This dissertation focuses on the fabrication of semiconducting nanowires (polycrystalline Ge & …
Study Of Multiferroic Properties Of Ferroelectric- Ferromagnetic Heterostructures Bzt-Bct/Lsmo, Md Abdullah-Al Mamun
Study Of Multiferroic Properties Of Ferroelectric- Ferromagnetic Heterostructures Bzt-Bct/Lsmo, Md Abdullah-Al Mamun
MSU Graduate Theses
Currently, there has been a flurry of research focused on multiferroic materials due to their potential applications. Lead (Pb)-based ferroelectric and multiferroic materials (PZT, PMN-PT, PZN-PT etc.) have been widely used for sensors, actuators, and electro-mechanical applications due to their excellent dielectric and piezoelectric properties. However, these materials are facing global restriction due to the toxicity of Pb. In this thesis, multiferroic properties of ferroelectric-ferromagnetic heterostructures consist of Pb-free perovskite oxides 0.5Ba(Zr0.2Ti0.8)O3-0.5 (Ba0.7 Ca0.3)TiO3 (BZT-BCT) and La0.7Sr0.3MnO3 (LSMO) have been studied. The heterostructures BZT-BCT/LSMO were …
Experimental And Theoretical Analyses Of The Structural, Electronic And Magnetic Properties Of Novel Inverted Core-Shell A-Cr2o3@A-Mxcr2-Xo3-Y (M=Co, Ni, Mn, Fe) Nanoparticles, Mohammad Delower Hossain
Experimental And Theoretical Analyses Of The Structural, Electronic And Magnetic Properties Of Novel Inverted Core-Shell A-Cr2o3@A-Mxcr2-Xo3-Y (M=Co, Ni, Mn, Fe) Nanoparticles, Mohammad Delower Hossain
MSU Graduate Theses
I used hydrothermal nano-phase epitaxy technique to synthesize well-ordered a-Cr2O3@a-MxCr2-xO3 (M = Co, Ni, Mn, Fe) inverted core-shell nanoparticles (NPs). This resulted in the formation of novel a-MxCr2-xO3 shells having ferromagnetic/ferrimagnetic (FM/FiM) spin ordering and an antiferromagnetic (AFM) a-Cr2O3 core structure. The combined results from Xray diffraction (XRD) and high resolution transmission electron microscoy (HRTEM) provide evidence of the presence of the corundum phase both in the shell and in the core regions. HRTEM results also show a sharp interface exhibiting epitaxial atomic registry of shell atoms over highly ordered core atoms whereas TEM-Energy dispersive spectroscopy analyses show that the …
Design And Development Of Stress Engineering Techniques For Iii-Nitride Epitaxy On Si, Jeff Leathersich
Design And Development Of Stress Engineering Techniques For Iii-Nitride Epitaxy On Si, Jeff Leathersich
Legacy Theses & Dissertations (2009 - 2024)
III-Nitrides have been a heavily researched material system for decades. Their material properties are favorable for a number of applications, most commonly in the optoelectronic and power device industry. Currently a majority of commercialized devices are fabricated on sapphire and SiC substrates but these are expensive and limit the widespread commercialization of the technology. There is substantial ongoing research geared toward the development of GaN on Si substrates because of the significant cost saving that would be realized through the inexpensive, large wafer and maturity of Si fabrication. Significant challenges with the deposition of GaN on Si have, thus far, …
Thermodynamic Studies On The Synthesis Of Nitrides And Epitaxial Growth Of Ingan, Zinki Monga
Thermodynamic Studies On The Synthesis Of Nitrides And Epitaxial Growth Of Ingan, Zinki Monga
Electronic Theses and Dissertations
Nitride semiconductor materials have been used in a variety of applications, such as LEDs, lasers, photovoltaic cells and medical applications. If incandescent bulbs could be replaced by white GaN LEDs, they would not only provide compactness and longer lifetime, but this would also result in huge energy savings. A renewed interest in InGaN emerged recently after it was discovered that the band gap for InN is 0.7eV, instead of the previously published value of 1.9eV. Thus InGaN solid solutions cover almost the whole visible spectrum, from a band gap of 3.34eV for GaN and 0.7eV for InN. Hence, InGaN can …
Carrier Lifetime Dynamics Of Epitaxial Layer Hvpe Gallium Arsenide Using Time-Resolved Experiments, Wayne E. Eikenberry
Carrier Lifetime Dynamics Of Epitaxial Layer Hvpe Gallium Arsenide Using Time-Resolved Experiments, Wayne E. Eikenberry
Theses and Dissertations
GaAs is a potential semiconductor material for producing both mid-infrared and terahertz radiation using the new technique of quasi-phase matching in an orientationally patterned GaAs (OP-GaAs) crystal. OP-GaAs is grown using a fast growth process called hydride vapor phase epitaxy (HVPE). Unfortunately, HVPE produces a high number of defects. These defects cause Shockley-Read-Hall recombination rates to dominate over Auger and radiative recombination rates. The carrier lifetime from four OP-GaAs samples are reported here using two different experimental techniques. The first experiment used a streak camera to measure the carrier lifetime via time-resolved photoluminescence. The temporal resolution of the streak camera …