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Thermal Properties Of La₀.₅Sr₀.₅Co₁₋ₓnixo₃-D Ceramics Using Photopyroelectric Technique, M. T. Sebastian, C. Preethy Menon, J. Philip, Robert W. Schwartz
Thermal Properties Of La₀.₅Sr₀.₅Co₁₋ₓnixo₃-D Ceramics Using Photopyroelectric Technique, M. T. Sebastian, C. Preethy Menon, J. Philip, Robert W. Schwartz
Mechanical and Aerospace Engineering Faculty Research & Creative Works
La0.5Sr0.5Co1-xNixO3-delta (0<= x<= 0.6) ceramics were prepared using a conventional solid-state ceramic route. The thermal properties—thermal conductivity and heat capacity—of these ceramics were measured by the photopyroelectric technique. The thermal conductivity was found to increase with increasing Ni content. These materials were also found to exhibit a metallic-type variation of thermal conductivity with temperature, and no metal-insulator (M-I) transition was found to occur in any of the samples prepared by this route. However, a M-I transition was found to occur in La0.5Sr0.5CoO3-delta samples prepared by hot pressing. The difference is attributed to variations in oxygen content in the samples.
Growth And Optical Properties Of Srbi₂Nb₂O₉ Ferroelectric Thin Films Using Pulsed Laser Deposition, Pingxiong Yang, David L. Carroll, John Ballato, Robert W. Schwartz
Growth And Optical Properties Of Srbi₂Nb₂O₉ Ferroelectric Thin Films Using Pulsed Laser Deposition, Pingxiong Yang, David L. Carroll, John Ballato, Robert W. Schwartz
Mechanical and Aerospace Engineering Faculty Research & Creative Works
High quality SrBi2Nb2O9 ferroelectric thin films were fabricated on platinized silicon using pulsed laser deposition assisted with dc glow discharge plasma. Microstructure and ferroelectric properties of the films were characterized. Optical properties of the thin films were studied by spectroscopic ellipsometry and photoluminescence from the ultraviolet to the infrared region. Optical constants, n~0.56 in the infrared region and n~2.24 in the visible spectral region, were determined through multilayer analyses on their respective pseudodielectric functions. The band-gap energy is estimated to be 3.60 eV. A photoluminescence peak at 0.78 µm, whose intensity decreases with decreasing temperature, was observed when excited with …