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Investigation Of The Threshold Voltage Shift Effect Of La2o3 On Tin/Hfo2/La2o3/Sio2/Si Stacks, Ming Di
Investigation Of The Threshold Voltage Shift Effect Of La2o3 On Tin/Hfo2/La2o3/Sio2/Si Stacks, Ming Di
Legacy Theses & Dissertations (2009 - 2024)
The semiconductor industry continues to scale (shrink) transistor dimensions to both increase the number of transistors per integrated circuit and their speed. One important aspect of scaling is the need to decrease the equivalent oxide thickness of the transistor gate dielectric while minimizing leakage current. Traditional thin layer SiO2 or SiOxNy films have been replaced by higher dielectric constant film stacks Here we study one example, the HfO2/La2O3/SiO2 stack. This dissertation describes an investigation of the use of La2O3 to reduce the threshold voltage of TiN/HfO2/SiO2/Si stacks (high-k/metal gate stacks). A significant aspect of this study is the determination of …
Fabrication And Characterization Of Nanomaterials Grown By Electron Beam Induced Deposition Process, Juntao Li
Fabrication And Characterization Of Nanomaterials Grown By Electron Beam Induced Deposition Process, Juntao Li
Legacy Theses & Dissertations (2009 - 2024)
Platinum&ndash and tungsten&ndashcontaining materials were grown on bulk substrates from a variety of precursors including (CH3)3CH3C5H4Pt, W(CO)6, WF6, and Pt(PF3)4 in either a high vacuum dual beam focused ion beam/scanning electron microscope (FIB&ndashSEM) or an environmental scanning electron microscope (ESEM). The effects of deposition conditions on the growth kinetics, microstructure and composition of the grown materials, structural and chemical homogeneity of impurities inside the deposits as well as the resistivity were investigated.
Nanoabrasives Retention And Removal Mechanisms In Polyurethane Pads For Copper Cmp, Iftikhar Ul-Hasan
Nanoabrasives Retention And Removal Mechanisms In Polyurethane Pads For Copper Cmp, Iftikhar Ul-Hasan
Legacy Theses & Dissertations (2009 - 2024)
The continued reduction in integrated circuit (IC) feature size requires similar reductions in surface defectivity. A key source of surface defects in IC fabrication processes stems from nanoabrasives used in chemical-mechanical planarization (CMP) processing. During CMP processing, polished surfaces are more vulnerable to defects including scratching, nanoabrasive particle adhesion and nanoabrasive agglomerate adhesion. The removal of these nano-sized particles is a priority for the IC fabrication industry and is reflected in the 2008 ITRS defect budget. However, there is insufficient technical understanding regarding the retention of residual nanoabrasives on the surfaces of the CMP pad following a CMP process and …