Open Access. Powered by Scholars. Published by Universities.®
Articles 1 - 2 of 2
Full-Text Articles in Entire DC Network
Characterization Of Silicon Phosphorus Alloy For Device Applications, Larry C. Cousar
Characterization Of Silicon Phosphorus Alloy For Device Applications, Larry C. Cousar
Graduate Theses and Dissertations
A new material of highly-phosphorus doped silicon for device applications was characterized and analyzed for new material properties. Devices such as NMOS transistors and other CMOS compatible devices may benefit from new materials that reduce external resistances and increase drive currents.
Material characterization requires numerous techniques and technologies to determine electrical, optical, and physical characteristics. For this work, Hall measurement, X-ray Diffraction, Raman Spectroscopy, Photoluminescence Characterization, and Spectroscopic Ellipsometry were used to better understand this new material. The results may lead to new models for silicon phosphorus alloys.
Large-Scale Graphene Film Deposition For Monolithic Device Fabrication, Khaled Al-Shurman
Large-Scale Graphene Film Deposition For Monolithic Device Fabrication, Khaled Al-Shurman
Graduate Theses and Dissertations
Since 1958, the concept of integrated circuit (IC) has achieved great technological developments and helped in shrinking electronic devices. Nowadays, an IC consists of more than a million of compacted transistors.
The majority of current ICs use silicon as a semiconductor material. According to Moore's law, the number of transistors built-in on a microchip can be double every two years. However, silicon device manufacturing reaches its physical limits. To explain, there is a new trend to shrinking circuitry to seven nanometers where a lot of unknown quantum effects such as tunneling effect can not be controlled. Hence, there is an …