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A Systematic Study Of The Optical And Electrical Properties Of Ge1-YSnY And Ge1-X-YSiXSnY Semiconductor Alloys, Thomas R. Harris
A Systematic Study Of The Optical And Electrical Properties Of Ge1-YSnY And Ge1-X-YSiXSnY Semiconductor Alloys, Thomas R. Harris
Theses and Dissertations
In order to fully utilize newly developed Ge1-ySny and Ge1-x-ySixSny materials for new novel optoelectronic devices, the optical and electrical properties of these alloys were investigated using photoluminescence (PL) and Hall-effect measurements. Direct bandgap PL emission was observed from almost all the samples, making them very promising candidates for Si-based light emitting devices. T-dependent PL studies also indicate that the indirect-to-direct bandgap transition of Ge1-ySny alloys might take place at a much lower Sn content than the theory predicts. T-dependent Hall-effect measurements showed both degenerate parallel conducting layers as …