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New Directions In Scanning Electron Microscopy Cathodoluminescence Microcharacterization, D. B. Holt
New Directions In Scanning Electron Microscopy Cathodoluminescence Microcharacterization, D. B. Holt
Scanning Microscopy
The general principles of the low-temperature spectroscopic cathodoluminescence (LTSCL) technique in the scanning electron microscope (SEM) are outlined. CL microscopy and spectroscopy are now being extended in new directions. Analysis of the intrinsic CL from quantum well materials by LTSCL is proving valuable for microcharacterization and such work can be expected to expand rapidly. The main, early CL results in this exciting field are summarized here. In geology, CL microscopy, without spectroscopy, is widely used via electron-beam attachments to light microscopes and the addition of spectral analysis to these studies is overdue. Much CL from minerals and ceramics comes from …
Digitized Cathodoluminescence Imaging Of Minerals, Ian M. Steele
Digitized Cathodoluminescence Imaging Of Minerals, Ian M. Steele
Scanning Microscopy
Digital imaging with cathodoluminescence (CL) capability, provides an additional, quantitative imaging perspective. While CL images can be useful by themselves, most microbeam instruments allow simultaneous acquisition of other signals including backscattered electron (BSE), secondary electron (SE), and X-ray images providing a powerful set of data for interpretation. Digital panchromatic images allow the use of standard and advanced image processing now available on laboratory computers to enhance single images or provide a means of combining information from two or more images. Other advantages of digital CL images include: 1) selective scan rates to avoid image distortion; 2) adjustable dwell times at …
Low Voltage Scanning Electron Microscopy Cathodoluminescence Observations Of Gallium Arsenide, S. Myhajlenko
Low Voltage Scanning Electron Microscopy Cathodoluminescence Observations Of Gallium Arsenide, S. Myhajlenko
Scanning Microscopy
A series of low voltage ( < 5 keV) and low temperature ( < 20K) cathodoluminescence (CL) measurements were performed on epitaxial gallium arsenide. The purpose of these measurements was to ascertain which factors were important in furthering the development of low voltage scanning electron microscopy (LVSEM) CL. LVSEM CL potentially offers great improvement in spatial resolution and the ability to probe the optical properties of surface states. Anomalous CL effects resulting from contamination at beam voltages below 3.5 keV have been interpreted in terms of cross-over potential phenomena. Luminescence dead layers were reduced to near zero in this regime. Excitonic processes were found to be particularly sensitive to injection level and surface conditions. Very weak free-to-bound transitions persisted down to 200 eV beam voltage.