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Characterization Of Hydride Vapor Phase Epitaxy Grown Gan Substrates For Future Iii-Nitride Growth, Alaa Ahmad Kawagy

Graduate Theses and Dissertations

The aim of this research is to investigate and characterize the quality of commercially obtained gallium nitride (GaN) on sapphire substrates that have been grown using hydride vapor phase epitaxy (HVPE). GaN substrates are the best choice for optoelectronic applications because of their physical and electrical properties. Even though HVPE GaN substrates are available at low-cost and create the opportunities for growth and production, these substrates suffer from large macro-scale defects on the surface of the substrate.

In this research, four GaN on sapphire substrates were investigated in order to characterize the surface defects and, subsequently, understand their influence on …

Magnetic Anisotropy And Exchange Bias In L10 Fept/Nio Bilayer Thin Films, Zachary B. Leuty

MSU Graduate Theses

Perpendicular exchange bias (PEB), particularly when it persists in nanomaterials to room temperature, is highly useful for applications in spintronic devices and for advancing the development of high-information-density magnetic random access memory. A complete mechanistic and theoretical understanding of exchange bias has evaded scientists. The quest to discover novel materials for magnetic and spintronic device applications has stimulated investigation into nanomaterials having optimal and/or tailored magnetic properties that are based on the exchange bias effect. In this study, pulsed laser deposition was used to grow epitaxial PEB systems of ferromagnetic FePt thin film layers that are interfaced with antiferromagnetic NiO …