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The Interplay Of Spin, Charge, And Heat: From Metal/Insulator Heterostructures To Perovskite Bilayers, Sam M. Bleser

Electronic Theses and Dissertations

In this dissertation begin with an investigation of non-local spin transport in an amorphous germanium (a-Ge) sample via the inverse spin Hall effect (ISHE). In that study we show that commonly used techniques such as differential conductance and delta mode of a paired Keithley 6221/2182a for non-local resistance measurements can lead to false indicators of spin transport. Next, we turn out attention to a thickness dependent study in thermally-evaporated chromium (Cr) thin films on a bulk polycrystalline yttrium-iron-garnet (YIG) substrate. This project analyzed the spin transport in the Cr films versus thickness via the longitudinal spin Seebeck effect (LSSE). This …

Thermal, Electrical, And Spin Transport: Encompassing Low-Damping Ferromagnets And Antiferromagnetic/Ferromagnetic Heterostructures, Matthew Ryan Natale

Electronic Theses and Dissertations

Continuing technological advancements bring forth escalating challenges in global energy consumption and subsequent power dissipation, posing significant economic and environmental concerns. In response to these difficulties, the fields of thermoelectrics, spintronics, and spincaloritronics emerge as contemporary solutions, each presenting unique advantages. Thermoelectric devices, based on the Seebeck effect, other a passive, carbon-free energy generating solution from waste heat. Although current thermoelectric technology encounters hurdles in achieving optimal efficiencies without intricate designs or complex materials engineering, recently research into low-damping metallic ferromagnetic thin films have provided a new method to enhance spin wave lifetimes, thus contributing to thermoelectric voltage improvements. As …

Towards Highly Sensitive Capacitance Measurements Of A Quantum Anomalous Hall Phase In Van Der Waal Heterostructures, Kayla Cerminara

UNLV Theses, Dissertations, Professional Papers, and Capstones

One of the pioneering achievements in condensed matter physics of the 20th century is the observation of the quantum Hall e↵ect (QHE) in which the Hall resistance in a two-dimensional (2D) sample takes on quantized values in the presence of a strong perpendicular magnetic field. The precise quantization of the hall resistance to one part in a billion has provided a practical, worldwide resistance standard. A long-standing goal has been to realize a similar state of matter but without the need of a strong quantizing magnetic field. The quantum anomalous Hall e↵ect (QAHE) is such a state that is predicted …

Development Of Graphene Synthesis And Characterization Techniques Toward Cmos Applications And Beyond, Otto Kno Zietz

Dissertations and Theses

Graphene exhibits mechanical and electrical properties which, coupled with its two dimensional (2D) morphology, make it an attractive material component for inclusion in a wide range of industries. Since the discovery of graphene in 2004, industry adoption has been limited due to the demanding synthesis requirements for high quality and connected graphene as well as the difficulties associated with direct incorporation. Chemical vapor deposition (CVD) has emerged as the most cost efficient method for producing high quality graphene at scales suitable for mass production. However, the 1000°C temperatures and micrometer thick catalysts required for this process preclude direct inclusion in …

Reading And Programming Spintronic Devices For Biomimetic Applications And Fault-Tolerant Memory Design, Kawsher Ahmed Roxy

USF Tampa Graduate Theses and Dissertations

Despite the triumph of conventional computing architectures till today, there emerges a lotof computing problems that are solved poorly by them. The reason behind this are twofold: i) the computing algorithm is incompetent in solving those problems, and ii) non-ideal effects of the traditional device technologies outperform the benets of using them. Hence, extensive research eorts have been put to devise novel algorithms as well as new devices. Among them spintronic devices demonstrate better performance in traditional architectures as well as offers way better solution to a lot of new problems when bundled with unconventional computing algorithms. Apart from being …

Investigation Of Wide Bandgap Semiconductors For Room Temperature Spintronic, And Photovoltaic Applications, Vishal Saravade

Doctoral Dissertations

"Suitability of wide bandgap semiconductors for room temperature (RT) spintronic, and photovoltaic applications is investigated.

Spin properties of metal-organic chemical vapor deposition (MOCVD) – grown gadolinium-doped gallium nitride (GaGdN) are studied and underlying mechanism is identified. GaGdN exhibits Anomalous Hall Effect at room temperature if it contains oxygen or carbon atoms but shows Ordinary Hall Effect in their absence. The mechanism for spin and ferromagnetism in GaGdN is a combination of intrinsic, metallic conduction, and carrier-hopping mechanisms, and is activated by oxygen or carbon centers at interstitial or similar sites. A carrier-related mechanism in MOCVD-grown GaGdN at room temperature makes …

Electric Field Control Of Fixed Magnetic Skyrmions For Energy Efficient Nanomagnetic Memory, Dhritiman Bhattacharya

Theses and Dissertations

To meet the ever-growing demand of faster and smaller computers, increasing number of transistors are needed in the same chip area. Unfortunately, Silicon based transistors have almost reached their miniaturization limits mainly due to excessive heat generation. Nanomagnetic devices are one of the most promising alternatives of CMOS. In nanomagnetic devices, electron spin, instead of charge, is the information carrier. Hence, these devices are non-volatile: information can be stored in these devices without needing any external power which could enable computing architectures beyond traditional von-Neumann computing. Additionally, these devices are also expected to be more energy efficient than CMOS devices …

Theoretical Investigations Of The Electronic, Magnetic, And Thermoelectric Properties Of Transition-Metal Based Compounds, Haleoot Edaan Raad

Graduate Theses and Dissertations

The electronic, magnetic, and thermoelectric properties of transition-metal based compounds were investigated by using the density functional theory and Boltzmann transport formalism. It was found that the Co-based Heusler compounds and InSe monochalcogenide are among the materials that may be used for future thermoelectric devices. Furthermore, the investigation showed that the quaternary Heusler compounds, such as, CoFeYGe, where Y is Ti or Cr, are half-metallic ferromagnetic materials with full electron spin polarization. The lattice thermal conductivity (κL) was found to decrease for these alloys as the temperature increases. The present investigation indicated that the phonon optical modes have a major …

Straintronic Nanomagnetic Devices For Non-Boolean Computing, Md Ahsanul Abeed

Theses and Dissertations

Nanomagnetic devices have been projected as an alternative to transistor-based switching devices due to their non-volatility and potentially superior energy-efficiency. The energy efficiency is enhanced by the use of straintronics which involves the application of a voltage to a piezoelectric layer to generate a strain which is ultimately transferred to an elastically coupled magnetostrictive nanomaget, causing magnetization rotation. The low energy dissipation and non-volatility characteristics make straintronic nanomagnets very attractive for both Boolean and non-Boolean computing applications. There was relatively little research on straintronic switching in devices built with real nanomagnets that invariably have defects and imperfections, or their adaptation …

Heat, Charge And Spin Transport Of Thin Film Nanostructures, Devin John Wesenberg

Electronic Theses and Dissertations

Understanding of fundamental physics of transport properties in thin film nanostructures is crucial for application in spintronic, spin caloritronics and thermoelectric applications. Much of the difficulty in the understanding stems from the measurement itself. In this dissertation I present our thermal isolation platform that is primarily used for detection of thermally induced effects in a wide variety of materials. We can accurately and precisely produce in-plane thermal gradients in these membranes, allowing for thin film measurements on 2-D structures. First, we look at thermoelectric enhancements of doped semiconducting single-walled carbon nanotube thin films. We use the Wiedemann-Franz law to calculate …

Materials For Giant Spin Hall Effect Devices, Avyaya Jayanthinarasimham

Legacy Theses & Dissertations (2009 - 2024)

Studies presented in this thesis are an effort to control the growth of β W and explore

Exploring Magnetic Nanostructures Embedded Within Single-Crystal Silicon For Generation Of Spin-Polarized Carriers, Machara Krishna Girish Malladi

Legacy Theses & Dissertations (2009 - 2024)

Integrating magnetic functionalities with silicon holds the promise of developing, in the most dominant semiconductor, a paradigm-shift information technology based on the manipulation and control of electron spin and charge. Here, we demonstrate an ion implantation approach enabling the synthesis of a ferromagnetic layer within a defect free Si environment by exploiting an additional implant of hydrogen in a region deep below the metal implanted layer. Upon post-implantation annealing, nanocavities created within the H-implanted region act as trapping sites for gettering the implanted metal species, resulting in the formation of metal nanoparticles in a Si region of excellent crystal quality. …

Towards Building A Prototype Spin-Logic Device, Ashish Verma Penumatcha

Open Access Dissertations

Since the late 1980s, several key discoveries, such as Giant and Tunneling Magne- toresistance, and advances in magnetic materials have paved the way for exponentially higher bit-densities in magnetic storage. In particular, the discovery of Spin-Transfer Torque (STT) has allowed information to be written to individual magnets using spin-currents. This has replaced the more traditional Oersted-field control used in field-MRAMs and allowed further scaling of magnetic-memories. A less obvious con- sequence of STT is that it has made possible a logic-technology based on magnets controlled by spin-polarized currents. Charge-coupled Spin Logic (CSL) is one such device proposal that couples a …

Hybrid Straintronics-Spintronics: Energy-Efficient Non-Volatile Devices For Boolean And Non-Boolean Computation, Ayan K. Biswas

Theses and Dissertations

Research in future generation computing is focused on reducing energy dissipation while maintaining the switching speed in a binary operation to continue the current trend of increasing transistor-density according to Moore’s law. Unlike charge-based CMOS technology, spin-based nanomagnetic technology, based on switching bistable magnetization of single domain shape-anisotropic nanomagnets, has the potential to achieve ultralow energy dissipation due to the fact that no charge motion is directly involved in switching. However, switching of magnetization has not been any less dissipative than switching transistors because most magnet switching schemes involve generating a current to produce a magnetic field, or spin transfer …

Electric Field Controlled Strain Induced Switching Of Magnetization Of Galfenol Nanomagnets In Magneto-Electrically Coupled Multiferroic Stack, Hasnain Ahmad

Theses and Dissertations

The ability to control the bi-stable magnetization states of shape anisotropic single domain nanomagnets has enormous potential for spawning non-volatile and energy-efficient computing and signal processing systems. One of the most energy efficient switching methods is to adopt a system of a 2-phase multiferroic nanomagnet, where a voltage applied on the piezoelectric layer generates a strain in it and the strain is elastically transferred to the magnetostrictive nanomagnet which rotates the magnetization states of the nanomagnet at room temperature via the converse magnet-electric effect. Recently, it has been demonstrated that the magnetization of a Co nanomagnet can be switched between …

Understanding Electronic Structure And Transport Properties In Nanoscale Junctions, Kamal B. Dhungana

Dissertations, Master's Theses and Master's Reports - Open

Understanding the electronic structure and the transport properties of nanoscale materials are pivotal for designing future nano-scale electronic devices. Nanoscale materials could be individual or groups of molecules, nanotubes, semiconducting quantum dots, and biomolecules. Among these several alternatives, organic molecules are very promising and the field of molecular electronics has progressed significantly over the past few decades. Despite these progresses, it has not yet been possible to achieve atomic level control at the metal-molecule interface during a conductance measurement, which hinders the progress in this field. The lack of atomic level information of the interface also makes it much harder …

Multiferroic Nanomagnetic Logic: Hybrid Spintronics-Straintronic Paradigm For Ultra-Low Energy Computing, Mohammad Salehi Fashami

Theses and Dissertations

Excessive energy dissipation in CMOS devices during switching is the primary threat to continued downscaling of computing devices in accordance with Moore’s law. In the quest for alternatives to traditional transistor based electronics, nanomagnet-based computing [1, 2] is emerging as an attractive alternative since: (i) nanomagnets are intrinsically more energy-efficient than transistors due to the correlated switching of spins [3], and (ii) unlike transistors, magnets have no leakage and hence have no standby power dissipation. However, large energy dissipation in the clocking circuit appears to be a barrier to the realization of ultra low power logic devices with such nanomagnets. …

Metal Oxide Growth, Spin Precession Measurements And Raman Spectroscopy Of Cvd Graphene, Akitomo Matsubayashi

Legacy Theses & Dissertations (2009 - 2024)

The focus of this dissertation is to explore the possibility of wafer scale graphene-based spintronics. Graphene is a single atomic layer of sp2 bonded carbon atoms that has attracted much attention as a new type of electronic material due to its high carrier mobilities, superior mechanical properties and extremely high thermal conductivity. In addition, it has become an attractive material for use in spintronic devices owing to its long electron spin relaxation time at room temperature. This arises in part from its low spin-orbit coupling and negligible nuclear hyperfine interaction. In order to realize wafer scale graphene spintronics, utilization of …

Applications Of 4-State Nanomagnetic Logic Using Multiferroic Nanomagnets Possessing Biaxial Magnetocrystalline Anisotropy And Experiments On 2-State Multiferroic Nanomagnetic Logic, Noel D'Souza

Theses and Dissertations

Nanomagnetic logic, incorporating logic bits in the magnetization orientations of single-domain nanomagnets, has garnered attention as an alternative to transistor-based logic due to its non-volatility and unprecedented energy-efficiency. The energy efficiency of this scheme is determined by the method used to flip the magnetization orientations of the nanomagnets in response to one or more inputs and produce the desired output. Unfortunately, the large dissipative losses that occur when nanomagnets are switched with a magnetic field or spin-transfer-torque inhibit the promised energy-efficiency. Another technique offering superior energy efficiency, “straintronics”, involves the application of a voltage to a piezoelectric layer to generate …

Hybrid Spintronics And Straintronics: An Ultra-Low-Energy Computing Paradigm, Kuntal Roy

Theses and Dissertations

The primary obstacle to continued downscaling of charge-based electronic devices in accordance with Moore's law is the excessive energy dissipation that takes place in the device during switching of bits. Unlike charge-based devices, spin-based devices are switched by flipping spins without moving charge in space. Although some energy is still dissipated in flipping spins, it can be considerably less than the energy associated with current flow in charge-based devices. Unfortunately, this advantage will be squandered if the method adopted to switch the spin is so energy-inefficient that the energy dissipated in the switching circuit far exceeds the energy dissipated inside …

Spin Polarized Transport In Nanoscale Devices, Sandipan Pramanik

Theses and Dissertations

The ultimate goal in the rapidly burgeoning field of spintronics is to realize semiconductor-based devices that utilize the spin degree of freedom of a single charge carrier (electron or hole) or an ensemble of such carriers to achieve novel and/or enhanced device functionalities such as spin based light emitting devices, spin transistors and femto-Tesla magnetic field sensors. These devices share a common feature: they all rely on controlled transport of spins in semiconductors. A prototypical spintronic device has a transistor-like configuration in which a semiconducting channel is sandwiched between two contacts (source and drain) with a gate electrode sitting on …

High-Temperature Ferromagnetism In Transition Metal Implanted Wide-Bandgap Semiconductors, Jeremy A. Raley

Theses and Dissertations

Material with both semiconductor and magnetic properties, which is commonly called a dilute magnetic semiconductor (DMS), will prove most useful in the fabrication of spintronic devices. In order to produce a DMS at above room temperature, transition metals (TMs) were implanted into host semiconductors of p-GaN, Al_0.35Ga_0.65N, or ZnO. Magnetic hysteresis measurements using a superconducting quantum interference device (SQUID) magnetometer show that some of the material combinations clearly exhibit ferromagnetism above room temperature. The most promising materials for creating spintronic devices using ion implantation are p-GaN:Mn, Al_0.35Ga_0.65N:Cr, and Fe-implanted ZnO nanotips on …