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Engineering

Theses and Dissertations

Theses/Dissertations

2004

ZnO

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High Quality Zno Epitaxial Grown By Plasma Assisted Molecular Beam Epitaxy, Yun Zhang Jan 2004

High Quality Zno Epitaxial Grown By Plasma Assisted Molecular Beam Epitaxy, Yun Zhang

Theses and Dissertations

Described in this thesis are the growth and characterization of high quality ZnO epitaxy layers.Zinc oxide (ZnO) epitaxy layers were grown on sapphire and epi-GaN substrates respectively, using plasma assisted molecular beam epitaxy (MBE) . Various growth conditions, such as growth temperature, II/VI ratio, and buffer layers, were employed to optimize the quality of the ZnO film. The subsequent characterization of the films was carried out to evaluate the surface, optical and crystalline properties of the film, using AFM, SEM, PL and XRD techniques. It was found out that the high quality of the ZnO film was grown on epi-GaN …


Gan Epitaxy On Melt Grown Thermally Prepared Bulk Zno Substrates, Xing Gu Jan 2004

Gan Epitaxy On Melt Grown Thermally Prepared Bulk Zno Substrates, Xing Gu

Theses and Dissertations

Different methods were developed for the preparation of bulk ZnO substrates. Remarkable improvement on the surface, optical and crystalline quality of the bulk ZnO substrate was achieved. ZnO substrates with an atomically flat surface exhibiting terrace-like features were used as a substrate for GaN grown by MBE. High-resolution x-ray diffraction and low temperature PL results show that similar high quality GaN layers can be achieved on both annealed O-face and Zn-face ZnO substrates. The prospect of the device applications of GaN epitaxy on ZnO, including AlGaN/GaN MODFET structure on ZnO and GAN/ZnO based p-n junction were discussed.


Luminescence In Zno, Jin Xu Jan 2004

Luminescence In Zno, Jin Xu

Theses and Dissertations

As a wide band semiconductor with a large binding energy (about 60meV), ZnO is a promising candidate semiconductor material for the next generation of optoelectronic , light emission or high power and high frequency devices. In order to make electrical device from ZnO, it is necessary to investigate optical properties of ZnO.In this thesis, PL setup and the properties of ZnO are introduced briefly and the optical properties of ZnO are investigated in detail. Temperature dependence of PL spectra of ZnO are measured and analyzed. Sharp emission line of PL spectra of rare earth (RE) doped ZnO are also investigated.