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Viewpoint: Experimental Recovery Of Geometrically Necessary Dislocation Density In Polycrystals, Brent L. Adams, Bassem S. El-Dasher, Anthony D. Rollett
Viewpoint: Experimental Recovery Of Geometrically Necessary Dislocation Density In Polycrystals, Brent L. Adams, Bassem S. El-Dasher, Anthony D. Rollett
Faculty Publications
The authors wish to thank The Alcoa Technical Research Center for supplying the specimens and performing the compression tests. This work was supported primarily by the MRSEC program of the National Science Foundation under DMR-0079996. Application of electron backscattering diffraction methods to recover estimates of the geometrically necessary dislocation density is described. The limitations of the method arising from the opacity of crystalline materials and the spatial and angular resolution limits are discussed.
Cuin1-Xalxse2 Thin Films And Solar Cells, P. D. Paulson, M. W. Haimbodi, S. Marsillac, R. W. Birkmire, W. N. Shafarman
Cuin1-Xalxse2 Thin Films And Solar Cells, P. D. Paulson, M. W. Haimbodi, S. Marsillac, R. W. Birkmire, W. N. Shafarman
Electrical & Computer Engineering Faculty Publications
CuIn[sub 1-x]Al[sub x]Se[sub 2] thin films are investigated for their application as the absorber layer material for high efficiency solar cells. Single-phase CuIn[sub 1-x]Al[sub x]Se[sub 2] films were deposited by four source elemental evaporation with a composition range of 0≤x≤0.6. All these films demonstrate a normalized subband gap transmission >85% with 2 µm film thickness. Band gaps obtained from spectroscopic ellipsometry show an increase with the Al content in the CuIn[sub 1-x]Al[sub x]Se[sub 2] film with a bowing parameter of 0.62. The structural properties investigated using x-ray diffraction measurements show a decrease in lattice spacing as the Al content increases. …