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Cvd Molybdenum Disulfide : Material And Device Engineering, Eui Sang Song
Cvd Molybdenum Disulfide : Material And Device Engineering, Eui Sang Song
Legacy Theses & Dissertations (2009 - 2024)
Molybdenum disulfide (MoS2) is a semiconducting 2D layered material that has attracted a lot of attention due to its material properties for electronics and optoelectronics device applications. These include a layer-dependent band gap, an indirect to direct energy transition at monolayer state, and strong light-matter interaction. A large majority of 2D materials and devices have been studied through micromechanical exfoliation for extraction and electron beam lithography for device fabrication. These methodologies while able to generate high quality materials and precisely fabricated devices, are not suitable for large scale production. Efforts have been made to make MoS2 and other 2D materials …
Degradation And Exciton Energy Transfer Studies In Single-Walled Carbon Nanotube Bundles, Abhishek Gottipati
Degradation And Exciton Energy Transfer Studies In Single-Walled Carbon Nanotube Bundles, Abhishek Gottipati
Legacy Theses & Dissertations (2009 - 2024)
Single walled carbon nanotubes (SWNTs) due to their unique optical behavior, large surface area, robust mechanical strength and electrical properties make them one of the ideal candidates for sensing and opto-electronic applications. In this work, we explore the energy transfer (exciton energy transfer-EET) phenomena occurring between nanotubes in bundles, using resonance Raman spectroscopy.
Metal Oxide Growth, Spin Precession Measurements And Raman Spectroscopy Of Cvd Graphene, Akitomo Matsubayashi
Metal Oxide Growth, Spin Precession Measurements And Raman Spectroscopy Of Cvd Graphene, Akitomo Matsubayashi
Legacy Theses & Dissertations (2009 - 2024)
The focus of this dissertation is to explore the possibility of wafer scale graphene-based spintronics. Graphene is a single atomic layer of sp2 bonded carbon atoms that has attracted much attention as a new type of electronic material due to its high carrier mobilities, superior mechanical properties and extremely high thermal conductivity. In addition, it has become an attractive material for use in spintronic devices owing to its long electron spin relaxation time at room temperature. This arises in part from its low spin-orbit coupling and negligible nuclear hyperfine interaction. In order to realize wafer scale graphene spintronics, utilization of …
Applications Of Raman Spectroscopy For Silicon Stress Characterization In Integrated Circuits, Colin Mcdonough
Applications Of Raman Spectroscopy For Silicon Stress Characterization In Integrated Circuits, Colin Mcdonough
Legacy Theses & Dissertations (2009 - 2024)
The introduction of mechanical stress in Si-based integrated circuits (ICs), whether desired or undesired, is intrinsic to IC fabrication. The origins are diverse and result from the numerous materials, geometries, and processes involved in fabrication. These stresses can lead to such effects as delamination, void formation and migration, and fracture, and can significantly affect device performance. As a result, stress development is a major concern for reliability, process control, and device design. It is necessary to investigate and characterize the origins and levels of the induced stresses. A more complete fundamental understanding of the evolution of stress in ICs and …
Effects Of Low Energy E-Beam Irradiation On Graphene And Graphene Field Effect Transistors And Raman Metrology Of Graphene On Split Gate Test Structures, Gayathri Rao
Legacy Theses & Dissertations (2009 - 2024)
Apart from its compelling performance in conventional nanoelectronic device geometries, graphene is an appropriate candidate to study certain interesting phenomenon (e.g. the Veselago lens effect) predicted on the basis of its linear electron dispersion relation. A key requirement for the observation of such phenomenon in graphene and for its use in conventional field-effect transistor (FET) devices is the need to minimize defects such as consisting of - or resulting from - adsorbates and lattice non-uniformities, and reduce deleterious substrate effects. Consequently the investigation of the origin and interaction of defects in the graphene lattice is essential to improve and tailor …