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Thermal Management Using Mems Bimorph Cantilever Beams, Ronald A. Coutu Jr., Robert S. Lafleur, John P. Walton, Laverne A. Starman
Thermal Management Using Mems Bimorph Cantilever Beams, Ronald A. Coutu Jr., Robert S. Lafleur, John P. Walton, Laverne A. Starman
Faculty Publications
This paper examines a passive cooling technique using microelectromechanical systems (MEMS) for localized thermal management of electronic devices. The prototype was designed using analytic equations, simulated using finite element methods (FEM), and fabricated using the commercial PolyMUMPs™ process. The system consisted of an electronic device simulator (EDS) and MEMS bimorph cantilever beams (MBCB) array with beams lengths of 200, 250, and 300 μm that were tested to characterize deflection and thermal behavior. The specific beam lengths were chosen to actuate in response to heating associated with the EDS (i.e. the longest beams actuated first corresponding to the hottest portion of …
Mems Fabrication Process Base On Su-8 Masking Layers, Scott A. Ostrow, Ronald A. Coutu Jr.
Mems Fabrication Process Base On Su-8 Masking Layers, Scott A. Ostrow, Ronald A. Coutu Jr.
AFIT Patents
A novel fabrication process uses a combination of negative and positive photoresists with positive tone photomasks, resulting in masking layers suitable for bulk micromachining high-aspect ratio microelectromechanical systems (MEMS) devices. This technique allows the use of positive photomasks with negative resists, opening the door to an ability to create complementary mechanical structures without the fabrication delays and costs associated with having to obtain a negative photomask. In addition, whereas an SU-8 mask would normally be left in place after processing, a technique utilizing a positive photoresist as a release layer has been developed so that the SU-8 masking material can …
Performance Comparison Of Pb(Zr0.52Ti0.48)O3-Only And Pb(Zr0.52Ti0.48)O3-On-Silicon Resonators, Hengky Chandrahalim, Sunil A. Bhave, Ronald G. Polcawich, Jeff Pulskamp, Dan Judy, Roger Kaul, Madan Dubey
Performance Comparison Of Pb(Zr0.52Ti0.48)O3-Only And Pb(Zr0.52Ti0.48)O3-On-Silicon Resonators, Hengky Chandrahalim, Sunil A. Bhave, Ronald G. Polcawich, Jeff Pulskamp, Dan Judy, Roger Kaul, Madan Dubey
Faculty Publications
This paper provides a quantitative comparison and explores the design space of lead zirconium titanate (PZT)–only and PZT-on-silicon length-extensional mode resonators for incorporation into radio frequency microelectromechanical system filters and oscillators. We experimentally measured the correlation of motional impedance (RX) and quality factor (Q) with the resonators’ silicon layer thickness (tSi). For identical lateral dimensions and PZT-layer thicknesses (tPZT), the PZT-on-silicon resonator has higher resonant frequency (fC), higher Q (5100 versus 140), lower RX (51 Ω versus 205 Ω), and better linearity [third-order input intercept …