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Characterization Of Advanced Etching Reactors Using Novel Diagnostic Tools, Vipulkumar Patel

Dissertations

Plasma etching equipment used for sub-micron integrated circuit fabrication at present are exclusively based on 13.56 MHz, capacitively coupled, parallel-plate geometry. The underlying mechanisms of plasma processes in these reactors are not well understood and there is even less understanding of how the etch-tool parameters relate to the plasma discharge characteristics which actually determine the etch process. In this thesis, new diagnostic techniques were applied for the characterization and optimization of plasma etching processes in various reactor configurations.

Specifically, diode and triode configurations were studied extensively using tuned scanning Langmuir probes. Both radial and axial distributions of plasma density were …