Open Access. Powered by Scholars. Published by Universities.®
Articles 1 - 2 of 2
Full-Text Articles in Entire DC Network
Growth And Characterization Of Non-Polar Gan Materials And Investigation Of Efficiency Droop In Ingan Light Emitting Diodes, Xianfeng Ni
Theses and Dissertations
General lighting with InGaN light emitting diodes (LEDs) as light sources is of particular interest in terms of energy savings and related environmental benefits due to high lighting efficiency, long lifetime, and Hg-free nature. Incandescent and fluorescent light sources are used for general lighting almost everywhere. But their lighting efficiency is very limited: only 20-30 lm/W for incandescent lighting bulb, approximately 100 lm/W for fluorescent lighting. State-of-the-art InGaN LEDs with a luminous efficacy of over 200 lm/W at room temperature have been reported. However, the goal of replacing the incandescent and fluorescent lights with InGaN LEDs is still elusive since …
Tuning Of Electrical Properties In Inaln/Gan Hfets And Ba0.5sr0.5tio3/Yig Phase Shifters, Jacob H. Leach
Tuning Of Electrical Properties In Inaln/Gan Hfets And Ba0.5sr0.5tio3/Yig Phase Shifters, Jacob H. Leach
Theses and Dissertations
Engineers know well from an early point in their training the trials and tribulations of having to make design tradeoffs in order to optimize one performance parameter for another. Discovering tradeoff conditions that result in the elimination of a loss associated with the enhancement of some other parameter (an improvement over a typical tradeoff), therefore, ushers in a new paradigm of design in which the constraints which are typical of the task at hand are alleviated. We call such a design paradigm “tuning” as opposed to “trading off”, and this is the central theme of this work. We investigate two …