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Valence-Band Electronic Structure Of Mos2 And Cs/Mos2(0002) Studied By Angle-Resolved X-Ray Photoemission Spectroscopy, Michelle Richards-Babb
Valence-Band Electronic Structure Of Mos2 And Cs/Mos2(0002) Studied By Angle-Resolved X-Ray Photoemission Spectroscopy, Michelle Richards-Babb
Faculty & Staff Scholarship
The angle dependence of the valence-band photoemission from the trigonal prismatic layered MoS2shows both the forward-scattering features normally observed in core-level photoelectron diffraction and, in addition, the initial-state orbital character associated with partially occupied, nonbonding MoIV(4dz2+4dx2−y2 +4dxy) orbitals near the top of the valence band. The difference in forward scattering between the Mo and S emitters is also used to assess relative contributions from the Mo and S atomic orbitals at specific binding energies within the valence band. Deposition of cesium (0.23 ML Cs with 1 ML equal to the Cs saturation coverage) onto the basal plane of MoS2 …
The Effect Of Atomic Hydrogen On The Growth Of Gallium Nitride By Molecular Beam Epitaxy, Zhonghai Yu, S. L. Buczkowski, N. C. Giles, T. H. Myers, Michelle Richards-Babb
The Effect Of Atomic Hydrogen On The Growth Of Gallium Nitride By Molecular Beam Epitaxy, Zhonghai Yu, S. L. Buczkowski, N. C. Giles, T. H. Myers, Michelle Richards-Babb
Faculty & Staff Scholarship
GaN was grown by molecular beam epitaxy using an rf plasma source. Growth under gallium‐rich conditions at 730 °C was required to produce high quality layers as indicated by photoluminescence, Hall effect, atomic force microscopy, and x‐ray diffraction measurements. Atomic hydrogen has a significant effect for Ga‐rich growth, increasing growth rates by as much as a factor of 2.