Digital Commons Network^™

Photoemission And Free Electron Laser Spectromicroscopy: Photoemission At High Lateral Resolution, G. Margaritondo

Scanning Microscopy

The move of photoemission analysis from the macroscopic to the microscopic domain has been accelerated by the advent of new ultrabright synchrotron sources of soft-X-rays. This makes an overview of photoemission spectromicroscopy, photoemission at high lateral resolution, quite timely. The overview begins with the basic concepts and problems, both technical and of data-taking strategy. Then, it presents a small number of examples of results in physics and biology, such as local chemical fluctuations in superconductors, semiconductor interfaces and the microchemistry of biological systems. The presentation includes the first experimental results from two new ultrabright synchrotron facilities: ELETTRA (in Italy) and …

Cathodoluminescence Contrast Of Localized Defects Part I. Numerical Model For Simulation, K. L. Pey, D. S. H. Chan, J. C. H. Phang

Scanning Microscopy

A three-dimensional model has been developed for cathodoluminescence contrast of localized defects in semiconductors. The numerical model incorporates electron-solid interaction effects, charge transport phenomena and optical losses. Electron-solid interaction is modelled by a Monte Carlo method. Three-dimensional continuity equation and derivative boundary conditions are discretized by a central-difference quotients scheme. Localized defects are represented by regions of enhanced non-radiative recombination. The discretized linear difference equations of the boundary value problem are solved by the successive-over-relaxation method. A method for avoiding the divergence problem during the successive-over-relaxation calculation is illustrated. The solutions of the model are compared with the analytical results …

Cathodoluminescence Contrast Of Localized Defects Part Ii. Defect Investigation, K. L. Pey, J. C. H. Phang, D. S. H. Chan

Scanning Microscopy

Cathodoluminescence contrast from defects with different geometrical and electronic properties have been studied using the numerical model developed in Part I. The contrast of a localized subsurface defect exhibits a maxima at a specific beam energy E_max which corresponds to the depth of the defect. The contrast of a dis-location which intersects the top surface perpendicularly is a decreasing function of beam energy. The differences in the image profiles of the two different kinds of defects allow the two types of imperfections to be distinguished. In addition, the resolution of a subsurface defect at beam energies lower than E …

A New Model Of Low Temperature Photoluminescence In Amorphous Semiconductors, Mathieu Kemp, Marvin Silver

Scanning Microscopy

Recent low temperature a-Si:H photoluminescence experiments show the presence of two peaks in the lifetime distribution, and a dependence of the efficiency on generation rate. These results contradict every existing model of amorphous semiconductor photoluminescence. The reason for the discrepancy is that every model predicts diffusive motion of the photo-generated pairs. We show how the inclusion of coulomb interaction between photocarriers, spin selection effects, and Auger recombination gives back agreement of theory with experiment. This new picture of the phenomenon also explains the transient behavior of the luminescence intensity.

Luminescence From Porous Silicon, Yasunori Mochizuki

Scanning Microscopy

Structural and optical properties of porous Si are reviewed with the main emphasis on the radiative recombination mechanisms. Behaviors of the visible photoluminescence and another intense luminescence process (the infrared luminescence) are discussed based on the available data provided by photoluminescence and related techniques. It is demonstrated that a further insight into the interrelation of these luminescence processes can be obtained by the optically-detected magnetic resonance method, in which non-radiative point defects (surface dangling bonds) are used as a local structural probe for the radiative states.

As for the model for the visible light emission, the implication of the quantum …