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Photon Emission Induced By The Scanning Tunneling Microscope, Richard Berndt
Photon Emission Induced By The Scanning Tunneling Microscope, Richard Berndt
Scanning Microscopy
By using the tip of a scanning tunneling microscope (STM) as a local source for electrons (or holes) light emission can be excited from metals, semiconductors and molecules. Using this technique, it is possible to combine the high spatial resolution of STM with optical techniques. We review results obtained using a variety of modes of measurements including fluorescence spectroscopy, isochromat spectroscopy and simultaneous mapping of photon emission and surface topography. In spatial maps of the photon emission, clear contrasts are observed with lateral resolutions below 1 nm which are related to the geometric and electronic structure of the sample and …
Tip-Induced Modifications In Scanning Tunneling Microscopy And Atomic Force Microscopy, K. Cho, J. D. Joannopoulos
Tip-Induced Modifications In Scanning Tunneling Microscopy And Atomic Force Microscopy, K. Cho, J. D. Joannopoulos
Scanning Microscopy
Tip-induced modifications of microscopic processes in scanning tunneling microscopy (STM) and atomic force microscopy (AFM) of the Si(l00) surface are investigated with ab initio total energy pseudopotential calculations. The results of the calculations lead to a new understanding of the microscopic STM measurement process and the micro-mechanical changes (hysteresis and plastic deformation) in the AFM process. In particular, in the latter case, the results predict that the tip can be used to flip dimers on the surface, from one buckled configuration to the other, reversibly, and without inducing damage to either the intrinsic surface or the tip.
Scanning Tunneling Microscope-Induced Luminescence Spectroscopy On Semiconductor Heterostructures, M. Pfister, M. B. Johnson, U. Marti, S. F. Alvarado, H. W. M. Salemink, D. Martin, F. Morier-Genoud, F. K. Reinhart
Scanning Tunneling Microscope-Induced Luminescence Spectroscopy On Semiconductor Heterostructures, M. Pfister, M. B. Johnson, U. Marti, S. F. Alvarado, H. W. M. Salemink, D. Martin, F. Morier-Genoud, F. K. Reinhart
Scanning Microscopy
Scanning tunneling microscope (STM)-induced luminescence is explored as a technique for the characterization of semiconductor quantum wells and quantum wire heterostructures. By injecting minority carriers into the cleaved cross section of these structures, luminescence excitation on a nanometer scale is demonstrated. Using spectrally resolved STM-induced luminescence for the tip placed at various positions across the cleaved heterostructure, it is possible to obtain local spectroscopic information on closely spaced quantum structures.